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Photoacoustic spectrum of porous silicon irradiated by light

Published online by Cambridge University Press:  31 January 2011

Toshio Kawahara ,
Takaharu Kiyotoo ,
Jun Morimoto ,
Ritsuyasu Koga ,
Sinsui Iwane ,
Kenichi Tahira  and
Toru Miyakawa
Toshio Kawahara
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1–10–20 Hashirimizu, Yokosuka 239–8686, Japan
Takaharu Kiyotoo
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1–10–20 Hashirimizu, Yokosuka 239–8686, Japan
Jun Morimoto
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1–10–20 Hashirimizu, Yokosuka 239–8686, Japan
Ritsuyasu Koga
Affiliation:
Department of Electronic Engineering, National Defense Academy, 1–10–20 Hashirimizu, Yokosuka 239–8686, Japan
Sinsui Iwane
Affiliation:
Department of Electronic Engineering, National Defense Academy, 1–10–20 Hashirimizu, Yokosuka 239–8686, Japan
Kenichi Tahira
Affiliation:
Department of Electronic Engineering, National Defense Academy, 1–10–20 Hashirimizu, Yokosuka 239–8686, Japan
Toru Miyakawa
Affiliation:
Department of Computer Science, Chiba Institute of Technology, 2–17–1 Tsudanuma, Narashino 275–0016, Japan
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Abstract

The photoacoustic (PA) spectra for the porous silicon samples irradiated during or after anodization are reported. The difference between the spectra for the irradiation conditions is discussed. The light irradiation time dependence of the PA spectra is shown. The irradiation after anodization causes the samples to luminesce in the blue region and enhances the photoluminescence signal intensity around 600 nm. It also reduces the PA signal intensity in the shorter wavelength region. The irradiation during the anodization causes enhancement only in the red-region luminescence.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 11 , November 1999 , pp. 4163 - 4166
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).CrossRefGoogle Scholar
2.Lehmann, V. and Gösele, U., Appl. Phys. Lett. 58, 856 (1991).CrossRefGoogle Scholar
3.Koshida, N. and Koyama, H., Appl. Phys. Lett. 57, 347 (1992).CrossRefGoogle Scholar
4.Mimura, H., Futagi, T., Matsumoto, T., Nakamura, T., and Kanemitsu, Y., Jpn. J. Appl. Phys. 33, 586 (1994).CrossRefGoogle Scholar
5.Tsybeskov, L., Vandyshey, Ju.V., and Fauchet, P.M., Phys. Rev. B49, 7821 (1994).CrossRefGoogle Scholar
6.Hou, X.Y., Shi, G., Wang, W., Zang, F.L., Hao, P.H., Huang, D.M., Jin, X.F., and Wang, X., in Microcrystalline Semiconductors: Materials Science and Devices, edited by Fauchet, P.M., Tsai, C.C., Canham, L.T., Shimizu, I., and Aoyagi, Y. (Mater. Res. Soc. Symp. Proc. 283, Pittsburgh, PA, 1993), p. 89.Google Scholar
7.Koyama, H. and Koshida, N., J. Appl. Phys. 74, 6365 (1993).CrossRefGoogle Scholar
8.Steiner, P., Kozlowski, F., Sandmaier, H., and Lang, W., in Microcrystalline Semiconductors: Materials Science and Devices, edited by Fauchet, P.M., Tsai, C.C., Canham, L.T., Shimizu, I., and Aoyagi, Y. (Mater. Res. Soc. Symp. Proc. 283, Pittsburgh, PA, 1993), p. 343.Google Scholar
9.Mizuno, H., Koyama, H., and Koshida, N., Appl. Phys. Lett. 69, 3779 (1996).CrossRefGoogle Scholar
10.Cruz-Orea, A., Delgadillo, I., Vargas, H., Gudiño-Martínez, A., Marín, E., Vázquez-López, C., Calderón, A., and Alvarado-Gil, J.J., J. Appl. Phys. 79, 8951 (1996).CrossRefGoogle Scholar
11.Kawahara, T., Sato, K., Yamaguchi, N., Morimoto, J., Tahira, K., and Miyakawa, T., Jpn. J. Appl. Phys. 37, 2818 (1998).CrossRefGoogle Scholar
12.Rosencwaig, A., Phys. Today 28, 23 (1975).CrossRefGoogle Scholar
13.Jackson, W. and Amer, N.W.. J. Appl. Phys. 51, 3343 (1980).CrossRefGoogle Scholar
14.Kawahara, T., Mihara, M., Morimoto, J., and Miyakawa, T., Jpn. J. Appl. Phys. 37, 2823 (1998).CrossRefGoogle Scholar