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Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2

Published online by Cambridge University Press:  31 January 2011

Jong-Heun Lee ,
Toshiyuki Mori ,
Ji-Guang Li ,
Takayasu Ikegami ,
John Drennan  and
Doh-Yeon Kim
Jong-Heun Lee*
Affiliation:
National Institute for Research in Inorganic Materials, Namiki 1–1, Tsukuba, Ibaraki, 305–0044, Japan
Toshiyuki Mori
Affiliation:
National Institute for Research in Inorganic Materials, Namiki 1–1, Tsukuba, Ibaraki, 305–0044, Japan
Ji-Guang Li
Affiliation:
National Institute for Research in Inorganic Materials, Namiki 1–1, Tsukuba, Ibaraki, 305–0044, Japan
Takayasu Ikegami
Affiliation:
National Institute for Research in Inorganic Materials, Namiki 1–1, Tsukuba, Ibaraki, 305–0044, Japan
John Drennan
Affiliation:
Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia, Brisbane, Qld 4072, Australia
Doh-Yeon Kim
Affiliation:
Center for Microstructure Science of Materials, School of Materials Science and Engineering, Seoul National University, Seoul 151–742, South Korea
*
a)Address all correspondence to this author.Current address: School of materials science and engineering, Seoul National University, Seoul 151-742, South korea.jongheun@gong.snu.ac.kr
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Abstract

The influence that trace concentrations of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, rgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 8 , August 2001 , pp. 2377 - 2383
Copyright
Copyright © Materials Research Society 2001

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References

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