Single-crystal silicon films on glass

Kishor P. Gadkaree; Kamal Soni; Shang-Cong Cheng; Carlo Kosik-Williams

doi:10.1557/jmr.2007.0330

Abstract

We present a new process based on the electrolysis of glass, which allows the transfer of a single-crystal silicon film while creating an in situ barrier layer free of mobile ions in the glass. This barrier layer consists only of network-forming elements (i.e., aluminum, silicon, and boron) and is free of modifiers. The barrier layer glass is unusual and cannot be synthesized via any of the known glass-forming processes. The barrier layer is thermally stable and thus allows the fabrication of displays with ultimate performance. The process consists of the hydrogen ion implantation of silicon to create a defect structure followed by bringing the glass and the silicon wafer in contact, and finally applying electrical potential to cause the electrolysis of glass.

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Single-crystal silicon films on glass

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This article has been cited by the following publications. This list is generated based on data provided by Crossref.

Article contents

Single-crystal silicon films on glass

Abstract

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References

REFERENCES

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