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Some titanium germanium and silicon compounds: Reaction and properties

Published online by Cambridge University Press:  31 January 2011

O. Thomas ,
F. M. d'Heurle  and
S. Delage
O. Thomas
Affiliation:
IBM T.J. Watson Research Center, P. O. 218, Yorktown Heights, New York 10598
F. M. d'Heurle
Affiliation:
IBM T.J. Watson Research Center, P. O. 218, Yorktown Heights, New York 10598
S. Delage
Affiliation:
IBM T.J. Watson Research Center, P. O. 218, Yorktown Heights, New York 10598
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Abstract

Titanium reacts with pure Ge in two different ways: At low temperatures one observes the formation of Ti6Ge5 with some characteristics typical of diffusion-controlled reaction. Upon completion of this first stage Ti6Ge5 reacts with remaining Ge to form TiGe2, isomorphous with C54 TiSi2, in a process which is clearly controlled by nucleation. The same observations apply to reactions with a Ge alloy containing 25 at.% Si. With an alloy containing 50 at.% Si the two stages become merged, so that while remaining identifiable, they are much less distinct than with the previous conditions. The reaction behavior observed with a Ge alloy containing 80 at.% Si resembles that generally obtained with pure Si: there are no easily identifiable steps between the initial Si–Ti sample and the final one, Si–TiSi2. With both the 50-50 and 80-20 Si–Ge alloys the formation of the C54 structure is preceded by that of the C49 structure (ZrSi2 type), as with pure Si. The gradual merging of the diffusion-controlled reaction and that controlled by nucleation as the concentration of Si in the substrate increases implies that nucleation plays a significant role in the formation of TiSi2, even if that role cannot be easily isolated. Effects due to gas impurities on the path of the metal-substrate reaction have been analyzed. The resistivities of several pure and alloyed phases have been measured. Alloy scattering in the system TiSi2–TiGe2 is briefly discussed.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 7 , July 1990 , pp. 1453 - 1462
Copyright
Copyright © Materials Research Society 1990

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