Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-30T21:27:16.706Z Has data issue: false hasContentIssue false
  • English
  • Français

A study of (111) oriented epitaxial thin films of In2O3 on cubic Y-doped ZrO2 by synchrotron based x-ray diffraction – ERRATUM

Published online by Cambridge University Press:  23 August 2012

Anna Regoutz ,
Kelvin H.L. Zhang ,
Russell G. Egdell ,
Didier Wermeille  and
Roger A. Cowley

Abstract

An abstract is not available for this content. As you have access to this content, full HTML content is provided on this page. A PDF of this content is also available in through the ‘Save PDF’ action button.
Type
Erratum
Information
Journal of Materials Research , Volume 27 , Issue 18 , 28 September 2012 , pp. 2447
Copyright
Copyright © Materials Research Society 2012

doi: 10.1557/jmr.2012.162, Published by Cambridge University Press, 8 June 2012.

In the article by Regoutz et al.,Reference Regoutz, Zhang, Egdell, Wermeille and Cowley1 a (1026) reflection is indicated throughout the text.

The correct reflection is (1026) in all instances.

The publisher regrets the error.

References

REFERENCE

1.Regoutz, A., Zhang, K.H.L., Egdell, R.G., Wermeille, D., and Cowley, R.A.: A study of (111) oriented epitaxial thin films of In2O3 on cubic Y-doped ZrO2 by synchrotron based x-ray diffraction. J. Mater. Res. 27, 2257–2264 (2012) doi: 10.1557/jmr.2012.162.CrossRefGoogle Scholar