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Two-dimensional layered materials: Structure, properties, and prospects for device applications

Published online by Cambridge University Press:  14 February 2014

Anupama B. Kaul
Anupama B. Kaul*
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109; and National Science Foundation, Arlington, Virginia 22203
*
a)Address all correspondence to this author. e-mail: anu.kaul@jpl.nasa.gov, akaul@nsf.gov
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Abstract

Graphene's layered structure has opened new prospects for the exploration of properties of other monolayer-thick two-dimensional (2D) layered crystals. The emergence of these inorganic 2D atomic crystals beyond graphene promises a diverse spectrum of properties. For example, hexagonal-boron nitride (h-BN), a layered material closest in structure to graphene is an insulator, while niobium selenide (NbSe2), a transition metal dichalcogenide, is metallic, and monolayers of other transition metal dichalcogenides such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are direct band gap semiconductors. The rich spectrum of properties exhibited by these 2D layered material systems can potentially be engineered on-demand and creates exciting prospects for using such systems in device applications ranging from electronics, photonics, energy harvesting, flexible electronics, transparent electrodes, and sensing. A review of the structure, properties, and the emerging device applications of these materials is presented in this paper. While the layered structure of these materials makes them amenable to mechanical exfoliation for quickly unveiling their novel properties and for fabricating proof-of-concept devices, an overview of the synthesis routes that can potentially enable scalable avenues for forming these 2D atomic crystals is also discussed.

Type
Invited Paper
Information
Journal of Materials Research , Volume 29 , Issue 3: Focus Issue: Graphene and Beyond , 14 February 2014 , pp. 348 - 361
Copyright
Copyright © Materials Research Society 2014 

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