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Studies of light ion beam for inertial confinement fusion by induction adder

Published online by Cambridge University Press:  09 March 2009

S. Miyamoto ,
K. Imasaki ,
Y. Yasuda ,
N. Yugami ,
T. Akiba ,
K. Tubakimoto ,
A. Zakou ,
S. Nakai  and
C. Yamanaka
S. Miyamoto
Affiliation:
Institute of Laser Engineering, Osaka University, Suita, Osaka 565, Japan
K. Imasaki
Affiliation:
Institute of Laser Engineering, Osaka University, Suita, Osaka 565, Japan
Y. Yasuda
Affiliation:
Institute of Laser Engineering, Osaka University, Suita, Osaka 565, Japan
N. Yugami
Affiliation:
Institute of Laser Engineering, Osaka University, Suita, Osaka 565, Japan
T. Akiba
Affiliation:
Institute of Laser Engineering, Osaka University, Suita, Osaka 565, Japan
K. Tubakimoto
Affiliation:
Institute of Laser Engineering, Osaka University, Suita, Osaka 565, Japan
A. Zakou
Affiliation:
Institute of Laser Engineering, Osaka University, Suita, Osaka 565, Japan
S. Nakai
Affiliation:
Institute of Laser Engineering, Osaka University, Suita, Osaka 565, Japan
C. Yamanaka
Affiliation:
Institute for Laser Technology, Suita, Osaka 565, Japan
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Abstract

Light ion beams for the energy drive for inertial confinement fusion (ICF) research have been studied on a super high voltage generation system (SHVS) using an inductive voltage adder system. A simple analysis implied the capability of the output voltage of several tens of MV. This system has a feasibility of acceleration of ions heavier than proton. The two-stage charge stripping ion diode is considered a SHVS diode. This diode reduces the size of the induction adder module and extends the possible power range in operation. We have constructed a prototype SHVS, which consists of eight stages of induction cavities (4MV, 40kA, 100ns) powered by a Reiden IV pulse power machine. The first ion diode experiments on the induction adder were performed with the beam extraction type ion diode (Br applied magnetic field). The injection plasma ion source was used to control the diode impedance and then the diode voltage. The time delay of ion current turn-on was reduced from 15–20 ns to less than 5 ns by this ion source.

Type
Research Article
Information
Laser and Particle Beams , Volume 7 , Issue 4 , November 1989 , pp. 687 - 699
Copyright
Copyright © Cambridge University Press 1989

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