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Backside Contacting for Uniform Luminance in Large-Area OLED

Published online by Cambridge University Press:  15 February 2017

P. Pfeiffer*
Affiliation:
GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074Aachen, Germany
X. D. Zhang
Affiliation:
GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074Aachen, Germany
D. Stümmler
Affiliation:
GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074Aachen, Germany
S. Sanders
Affiliation:
GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074Aachen, Germany
M. Weingarten
Affiliation:
GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074Aachen, Germany
M. Heuken
Affiliation:
GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074Aachen, Germany AIXTRON SE, Dornkaulstr. 2, 52134Herzogenrath, Germany
A. Vescan
Affiliation:
GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074Aachen, Germany
H. Kalisch
Affiliation:
GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074Aachen, Germany
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Abstract

We have investigated organic light emitting diode (OLED) backside contacting for the enhancement of luminance uniformity as a superior alternative to gridlines. In this approach, the low-conductivity OLED anode is supported by a high-conductivity auxiliary electrode and vertically contacted through via holes. Electrical simulations of large-area OLEDs have predicted that this method allows comparable luminance uniformity while sacrificing significantly less active area compared to the common gridline approach.

The method for fabricating backside contacts is comprised of five steps: (1) Thin-film encapsulation of the OLED, (2) Patterning of the OLED surface with lithography (resist mask defining via hole positions), (3) Via hole formation to the bottom anode by a plasma etching process, (4) Organic residues removal and sidewall insulation. (5) Contacting of the anode with a high-conductivity auxiliary electrode.

Backside-contacted OLEDs processed by organic vapor phase deposition show high luminance uniformity. Scanning electron microscopy pictures and electrical breakthrough measurements confirm efficient sidewall insulation.

Type
Articles
Copyright
Copyright © Materials Research Society 2017 

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References

REFERENCES

Slawinski, M., Weingarten, M., Heuken, M., Vescan, A. and Kalisch, H., Organic Electronics 14 (2013).Google Scholar
Lifka, H., Van De Weijer, P., Van Mol, A.M.B., U. S. Patent No. US 2012/0074454 A1 (29 March 2012)Google Scholar
Liew, Y-F., Aziz, H., Hu, N-X., Chan, H.S-O., Xu, G., Popovic, Z., Applied Physics Letters 77, 2650 (2000).CrossRefGoogle Scholar
Han, E-M., Do, L-M., Yamamoto, N., Fujihira, M., Thin Solid Films 273, 202208 (1996)Google Scholar
Seifert, R., Scholz, S., Lüssem, B., Leo, K., Applied Physics Letters 97, 013308 (2010).CrossRefGoogle Scholar
Wu, C.C., Wu, C.I., Sturm, J.C., Kahn, A., Applied Physics Letters 70, 1348 (1997).Google Scholar