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Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication

Published online by Cambridge University Press:  11 June 2020

James N. Pan
James N. Pan*
Affiliation:
Advanced Enterprise and License Company (AELC), Linthicum, Maryland21090, USA
*
Email: nan-hsi.pan@ngc.com
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Abstract

Traditionally, CMOS transistors are for low power, high speed, and high packing density applications. CMOS is also commonly used as power regulating devices, and light sensors (CCD or CMOS image sensors). In this paper, we would like to introduce Photonic CMOS as a light emitting device for optical computing, ASIC, power transistors, and ultra large scale integration (ULSI). A Photonic CMOS Field Effect Transistor is fabricated with a low-resistance laser or LED in the drain region, and multiple photon sensors in the channel / well regions. The MOSFET, laser, and photon sensors are fabricated as one integral transistor. With embedded nonlinear optical films, the Photonic CMOSFETs have the capability of detecting and generating focused laser beams of various frequencies to perform optical computing, signal modulation, polarization, and multiplexing for digital / analog processing and communication.

Type
Articles
Information
MRS Advances , Volume 5 , Issue 37-38: Electronics and Photonics , 2020 , pp. 1965 - 1974
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Copyright
Copyright © Materials Research Society 2020

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