Published online by Cambridge University Press: 15 February 2016
We demonstrated the fabrication of 10 emitters InGaN laser diode array of themaximum output power of 9 W at 420 nm. The device as a whole has thedifferential efficiency of above 1 W/A. The maximum output power is limited to 9W (pulse operation) by catastrophic mirror damage or to around 5 W in CWoperation by thermal roll-over. Larger arrays with stripes width of around 15µm and numbers of emitters up to 20 should enable reaching 20 W, whichis suitable for light engine of desktop projectors and a building block ofcinema theater projectors.
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