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H2S-free Metal-Organic Vapor Phase Epitaxy of Coalesced 2D WS2 Layers on Sapphire

Published online by Cambridge University Press:  03 January 2019

A. Grundmann ,
D. Andrzejewski ,
T. Kümmell ,
G. Bacher ,
M. Heuken ,
H. Kalisch  and
A. Vescan
A. Grundmann
Affiliation:
Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074Aachen, Germany
D. Andrzejewski
Affiliation:
Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, Bismarckstr. 81, 47057Duisburg, Germany
T. Kümmell
Affiliation:
Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, Bismarckstr. 81, 47057Duisburg, Germany
G. Bacher
Affiliation:
Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, Bismarckstr. 81, 47057Duisburg, Germany
M. Heuken
Affiliation:
AIXTRON SE, Dornkaulstr. 2, 52134Herzogenrath, Germany
H. Kalisch*
Affiliation:
Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074Aachen, Germany
A. Vescan
Affiliation:
Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074Aachen, Germany
*
*(Email: kalisch@cst.rwth-aachen.de)
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Abstract

The 2D transition metal dichalcogenide (TMDC) tungsten disulfide (WS2) has attracted great interest due to its unique properties and prospects for future (opto)electronics. However, compared to molybdenum disulfide (MoS2), the development of a reproducible and scalable deposition process for 2D WS2 has not advanced very far yet. Here, we report on the systematic investigation of 2D WS2 growth on hydrogen (H2)-desorbed sapphire (0001) substrates using a hydrogen sulfide (H2S)-free metal-organic vapor phase epitaxy (MOVPE) process in a commercial AIXTRON planetary hot-wall reactor in 10 × 2" configuration. Tungsten hexacarbonyl (WCO, 99.9 %) and di-tert-butyl sulfide (DTBS, 99.9999 %) were used as MO sources, nitrogen (N2) was selected as carrier gas for the deposition processes (standard growth time 10 h). In an initial study, the impact of growth temperature on nucleation and growth was investigated and an optimal value of 820 °C was found. The influence of the WCO flow on lateral growth was investigated. The aim was to maximize the edge length of triangular crystals as well as the total surface coverage. Extending gradually the growth time up to 20 h at optimized WCO flow conditions yields fully coalesced WS2 samples without parasitic carbon-related Raman peaks and with only sparse bilayer nucleation. After substrate removal, a fully coalesced WS2 film was implemented into a light-emitting device showing intense red electroluminescence (EL).

Keywords

2D materialsvapor phase epitaxy (VPE)SWmetalorganic deposition
Type
Articles
Information
MRS Advances , Volume 4 , Issue 10: Electronic, Photonic and Magnetic Materials , 2019 , pp. 593 - 599
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Copyright
Copyright © Materials Research Society 2018 

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