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Limitation in growth temperature for water-assisted single wall carbon nanotube forest synthesis

Published online by Cambridge University Press:  22 January 2018

Shunsuke Sakurai*
Affiliation:
CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Maho Yamada
Affiliation:
CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Kenji Hata
Affiliation:
CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Don N. Futaba
Affiliation:
CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
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Abstract

In this study, we examined the limitations in growth temperatures for single-walled carbon nanotube (SWNT) forest synthesis using a water (H2O) growth enhancer as highlighted by a dramatic decrease in growth efficiency at high temperatures. Comparative synthesis using a carbon monoxide (CO) growth enhancer demonstrated a wider temperature window for SWNT forest synthesis. We found that SWNT forests taller than 100 μm could not been synthesized above 850 °C by using H2O, but by using CO, tall (>800 μm) forests could be synthesized at growth temperatures exceeding 900 °C. The dependency of H2O concentration showed that H2O, itself, was the cause for the reduced growth efficiency observed at higher temperatures. In contrast, increased CO concentrations did not result in any drop in the carbon nanotube (CNT) yield across the entire temperature range. While a severe drop of CNT yield above 950 °C was observed when CO was used, the origin was found to stem from catalyst particle aggregation enhanced by diffusion on the surface rather than CO itself. Therefore, the ability to synthesize at higher growth temperatures is advantageous when using more stable carbon feedstocks, such as methane.

Type
Articles
Copyright
Copyright © Materials Research Society 2018 

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References

REFERENCES:

Murakami, Y., Chiashi, S., Miyauchi, Y., Hu, M., Ogura, M., Okubo, T., and Maruyama, S., Chem. Phys. Lett. 385, 298 (2004).Google Scholar
Hata, K., Futaba, D.N., Mizuno, K., Namai, T., Yumura, M., and Iijima, S., Science 306, 1362 (2004).Google Scholar
Kong, J., Cassell, A., and Dai, H., Chem. Phys. Lett. 292, 567 (1999).Google Scholar
Nikolaev, P., Bronikowski, M.J., Bradley, R.K., Rohmund, F., Colbert, D.T., Smith, K.A., and Smalley, R.E., Chem. Phys. Lett. 313, 91 (1998).CrossRefGoogle Scholar
Zhang, G.G., Mann, D., Zhang, L., Javey, A., Li, Y.M., Yenilmez, E., Wang, Q., McVittie, J.P., Nishi, Y., Gibbons, J., and Dai, H., Proc. Natl. Acad. Sci. U.S.A. 102, 16141 (2005).Google Scholar
Wen, Q., Qian, W.Z., Wei, F., Liu, Y., Ning, G.Q., and Zhang, Q., Chem. Mater. 19, 1226 (2007).CrossRefGoogle Scholar
Futaba, D.N., Goto, J., Yasuda, S., Yamada, T., Yumura, M., and Hata, K., Adv. Mater. 21, 4811 (2009).Google Scholar
Futaba, D.N., Goto, J., Yasuda, S., Yamada, T., Yumura, M, and Hata, K., J. Am. Chem. Soc., 131, 15992 (2009)Google Scholar
Yamada, T., Maigne, A., Yudasaka, M., Mizuno, K., Futaba, D.N., Yumura, M., Iijima, S., and Hata, K., Nano Lett. 8, 4288 (2008).Google Scholar
Amama, P.B., Pint, C.L., McJilton, L., Kim, S.M., Stach, E.A., Murray, P.T., Hauge, R.H., amd Maruyama, B., Nano Lett. 9, 44 (2009).CrossRefGoogle Scholar
Hasegawa, K. and Noda, S., ACS Nano 5, 975 (2011).Google Scholar
Futaba, D.N., Hata, K., Yamada, T., Mizuno, K., Yumura, M., and Iijima, S., Phys. Rev. Lett. 95, 056104 (2005).Google Scholar
Yasuda, S., Futaba, D.N., Yumura, M., Iijima, S., and Hata, K., Appl. Phys. Lett. 93, 143115 (2008).Google Scholar
Kataura, H., Kumazawa, Y., Maniwa, Y., Umezu, I., Suzuki, S., Ohtsuka, Y., and Achiba, Y., Synth. Metals, 103, 2555 (1999).Google Scholar
Chen, G., Davis, R.C., Futaba, D.N., Sakurai, S., Kobashi, K., Yumura, M., and Hata, K., Nanoscale 8, 162 (2016).Google Scholar