Among the many point defects in crystalline solids, antisite defects play a key role in the stability of intermetallics. Such defects are either thermal equilibrium defects or are introduced by some external forcing.

There are, indeed, many examples where intermetallics or compound semiconductors are “driven,” i.e., sustained in nonequilibrium configurations by external forcing. Good examples include the following:

∎ Intermetallics in alloys under irradiation, like FeZr2 in Zircalloy used as a cladding material in pressurized water nuclear reactors, or any of the compounds produced by ion implantation or ion beam mixing (atoms are continuously forced to change lattice sites because of replacement collsions). See, for example, Reference 1.

∎ Intermetallics in superalloys under cyclic fatigue (γ′ precipitates in persistent slip bands undergo sustained shearing, and sometimes redissolves).

∎ Intermetallics during high-energy ball milling, a promising technique to stabilize nonequilibrium phases.

∎ Ordered compounds when formed by vapor phase deposition.

In such compounds, atoms are forced to leave their optimum local surroundings by nuclear collisions, shearing, fracturing, and welding respectively, or land on a surface at a random position, while thermal jumps tend to restore some degree of local atomic order. For simplicity, we call such compounds “driven systems” or “driven intermetallics.” Indeed, such systems are driven away from the usual thermodynamic equilibrium by a permanent dynamical forcing (nuclear collisions, plastic shear, etc.).