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Chalcogenide Glasses

Published online by Cambridge University Press:  29 November 2013

P. Craig Taylor
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Although there are some significant exceptions, most important glass-forming systems contain elements from the sixth, or chalcogenide, column of the periodic table (oxygen, sulfur, selenium, or tellurium). The glasses which contain oxygen are typically insulators, while those which contain the heavier chalcogen elements are usually semiconductors. Even though oxygen is technically a chalcogen element, the term “chalcogenide glass” is commonly used to denote those largely covalent, semiconducting glasses which contain sulfur, selenium, or tellurium as one of the constituents.

The chalcogenide glasses are called semiconducting glasses because of their electrical properties. The electrical conductivity in these glasses depends exponentially on the temperature with an activation energy which is approximately one half of the optical gap. In this sense these glasses exhibit electrical properties similar to those in intrinsic crystalline semiconductors. The analogy is by no means perfect. The mobilities for the charge carriers in these glasses are very low (< 10 cm2/V-s) compared to crystalline semiconductors, and there are even discrepancies in determining the sign of the charge carriers from measurements of the Hall effect and the Seebeck effect.

The first detailed studies of the chalcogenide glasses were performed about 30 years ago. For many years the prototype compositions have been selenium (Se), arsenic triselenide (As2Se3) or arsenic trisulfide (As2S3), and germanium diselenide (GeSe2) or germanium disulfide (GeS2).

Type
Glasses
Information
MRS Bulletin , Volume 12 , Issue 5 , August 1987 , pp. 36 - 39
Copyright
Copyright © Materials Research Society 1987

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References

1.Flaschen, S.S., Pearson, A.D., and Northover, W.R., J. Am. Ceram, Soc. 42 (1959) p. 450.CrossRefGoogle Scholar
2.Kolomiets, B.T. and Lyubin, V.M., Sov. Phys. Solid State 1 (1959) p. 674.Google Scholar
3.Zachariasen, W.H., J. Am. Chem. Soc. 54 (1932) p. 3841.CrossRefGoogle Scholar
4.Taylor, P.C., Bishop, S.G., Mitchell, D.L., and Treacy, D., in Proceedings of the 5th International Conference on Amorphous and Liquid Semiconductors (Taylor and Francis, London, 1974) p. 1267.Google Scholar
5.Phillips, J.C., Beevers, C.A., and Gould, S.E.B., Phys. Rev. B 12 (1980) p. 5274.Google Scholar
6.Taylor, P.C. in Coherence and Energy Transfer in Glasses, edited by Fleury, P.A. and Golding, B. (Plenum, New York, 1984) p. 281.CrossRefGoogle Scholar
7.Taylor, P.C., Bishop, S.G., and Mitchell, D.L., Phys. Rev. Lett. 27 (1971) p. 414.CrossRefGoogle Scholar
8.Zeller, R.C. and Pohl, R.O., Phys. Rev. B 4 (1971) p. 2029.CrossRefGoogle Scholar
9.Phillips, W.A., J. Low Temp. Phys. 7 (1972) p. 351; P.W. Anderson, B.I. Halperin, and C. Varma, Philos. Mag. 25 (1972) p. 1.CrossRefGoogle Scholar
10.Urbach, R., Phys. Rev. 92 (1953) p. 1324.CrossRefGoogle Scholar
11.Anderson, P.W., Phys. Rev. 109 (1958) p. 1492.CrossRefGoogle Scholar
12.Tauc, J., in Amorphous and Liquid Semiconductors, edited by Tauc, J. (Plenum, New York, 1974) p. 159.CrossRefGoogle Scholar
13.Bishop, S.G., Strom, U., and Taylor, P.C., Phys. Rev. B 15 (1977) p. 2278.CrossRefGoogle Scholar
14.Anderson, P.W., Phys. Rev. Lett. 34 (1975) p. 953.CrossRefGoogle Scholar
15.Mott, N.F., Davis, E.A., and Street, R.A., Philos. Mag. 32 (1975) p. 961.CrossRefGoogle Scholar
16.Kastner, M., Adler, D., and Fritzsche, H., Phys. Rev. Lett. 37 (1976) p. 1504.CrossRefGoogle Scholar
17.deNeufville, J.P., in Optical Properties of Solids: New Developments, edited by Seraphin, B.O. (North Holland, Amsterdam, 1976) Chapter 9.Google Scholar
18.Ovshinsky, S.R., Phys. Rev. Lett. 21 (1968) p. 1450.CrossRefGoogle Scholar
19.Bishop, S.G. and Moore, W.J., Appl. Opt. 12 (1973) p. 80.CrossRefGoogle Scholar
20.Mitchell, D.L., Bishop, S.G., and Taylor, P.C., Solid State Commun. 9 (1971) p. 1833.CrossRefGoogle Scholar
21.Kostyshin, M.T., Mikhailovskaya, E.V., and Romanenko, P.F., Sov. Phys. - Solid State 8 (1966) p. 451; R.G. Brandes, F.P. Laming, and A.D. Pearson, Appl. Opt. 9 (1970) p. 1712.Google Scholar