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Ferromagnetic III–V and II–VI Semiconductors

Published online by Cambridge University Press:  31 January 2011

Tomasz Dietl  and
Hideo Ohno
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Abstract

Recent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay the foundation for semiconductor spintronics. Spin-injection capabilities and tunability of magnetization by light and electric field in Mn-based III–V and II–VI diluted magnetic semiconductors are examples of noteworthy accomplishments. This article reviews the present understanding of carrier-controlled ferromagnetism in these compounds with a focus on mechanisms determining Curie temperatures and accounting for magnetic anisotropy and spin stiffness as a function of carrier density, strain, and confinement. Materials issues encountered in the search for semiconductors with a Curie point above room temperature are addressed, emphasizing the question of solubility limits and self-compensation that can lead to precipitates and point defects. Prospects associated with compounds containing magnetic ions other than Mn are presented.

Keywords

magnetic propertiessemiconductor alloysspin-polarized materialsspintronicsthin films
Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 10: New Materials for Spintronics , October 2003 , pp. 714 - 719
Copyright
Copyright © Materials Research Society 2003

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References

1.Gała¸zka, R.R., in Proc. 14th Int. Conf. on Physics of Semiconductors, Inst. Phys. Conf. Ser. 43, edited by Wilson, B.L.H. (Institute of Physics, Bristol, 1978) p. 133Google Scholar
2.Dietl, T., in Physics in High Magnetic Fields, Springer Series in Solid-State Physics, Vol. 24, edited by Chikazumi, S. and Miura, N. (Springer, Berlin, 1981) p 344.Google Scholar
3.Furdyna, J.K. and Kossut, J., eds., Diluted Magnetic Semiconductors, Semiconductors and Semimetals, Vol. 25, Willardson, R.K. and Beer, A.C., series editors (Academic Press, New York, 1988).Google Scholar
4.Dietl, T., in Materials, Properties and Preparations, edited by Mahajan, S., Handbook on Semiconductors, 2nd ed., Vol. 3B, edited by Moss, T.C. (North-Holland, Amsterdam, 1994) p. 1251.Google Scholar
5.Ohno, H., Munekata, H., Penney, T.von Molnár, S., and Chang, L.L., Phys. Rev. Lett. 68 (1992) p. 2664.CrossRefGoogle Scholar
6.Ohno, H., Shen, A., Matsukura, F., Oiwa, A., Endo, A., Katsumoto, S., and Iye, Y., Appl. Phys. Lett. 69 (1996) p. 363.CrossRefGoogle Scholar
7.Matsukura, F., Ohno, H., Shen, A., and Sugawara, Y., Phys. Rev. B 57 (1998) p. R2037.CrossRefGoogle Scholar
8.Dietl, T., Haury, A. and Merle d'Aubigné, Y., Phys. Rev. B 55 (1997) p. R3347.CrossRefGoogle Scholar
9.Haury, A., Wasiela, A., Arnoult, A., Cibert, J., Tatarenko, S., Dietl, T., and Merle d'Aubigné, Y., Phys. Rev. Lett. 79 (1997) p. 511.CrossRefGoogle Scholar
10.Ferrand, D., Cibert, J., Wasiela, A., Bourgognon, C., Tatarenko, S., Fishman, G., Andrearczyk, T., Jaroszyński, J., Koleśnik, S., Dietl, T., Barbara, B., and Dufeu, D., Phys. Rev. B 63 085201 (2001)CrossRefGoogle Scholar
11.Ohno, H., Science 281 (1998) p. 951.CrossRefGoogle Scholar
12.Koshihara, S., Oiwa, A., Hirasawa, M., Katsumoto, S., Iye, Y., Urano, C., Takagi, H., and Munekata, H., Phys. Rev. Lett. 78 (1997) p. 617.CrossRefGoogle Scholar
13.Ohno, H., Chiba, D., Matsukura, F., Omiya, T., Abe, E., Dietl, T., Ohno, Y., and Ohtani, K., Nature 408 (2000) p. 944.CrossRefGoogle Scholar
14.Boukari, H., Kossacki, P., Bertolini, M., Ferrand, D., Cibert, J., Tatarenko, S., Wasiela, A., Gaj, J.A., and Dietl, T., Phys. Rev. Lett. 88 207204 (2002).CrossRefGoogle Scholar
15.Ohno, Y., Young, D.K., Beschoten, B., Matsukura, F., Ohno, H., and Awschalom, D.D., Nature 402 (1999) p. 790.CrossRefGoogle Scholar
16.Young, D.K., Johnston-Halperin, E., Awschalom, D.D., Ohno, Y., and Ohno, H., Appl. Phys. Lett. 80 (2002) p. 1598.CrossRefGoogle Scholar
17.Kohda, M., Ohno, Y., Takamura, K., Matsukura, F., and Ohno, H., Jpn. J. Appl. Phys. Part 2: Lett. 40 (2001) p. L1274.CrossRefGoogle Scholar
18.Johnston-Halperin, E., Lofgreen, D., Kawakami, R.K., Young, D.K., Coldren, L., Gossard, A.C., and Awschalom, D.D., Phys. Rev. B 65 041306(R) (2002).CrossRefGoogle Scholar
19.Chiba, D., Akiba, N., Matsukura, F., Ohno, Y., and Ohno, H., Appl. Phys. Lett. 77 (2000) p. 1873.CrossRefGoogle Scholar
20.Sadowski, J., Mathieu, R., Svedlindh, P., Karlsteen, M., Kanski, J., Fu, Y., Domagala, J.T., Szuszkiewicz, W., Hennion, B., Maude, D.K., Airey, R. and Hill, G., Thin Solid Films 412 (2002) p. 122.CrossRefGoogle Scholar
21.Liu, X., Sasaki, Y., and Furdyna, J.K., Appl. Phys. Lett. 79 (2001) p. 2414.CrossRefGoogle Scholar
22.Tanaka, M. and Higo, Y., Phys. Rev. Lett. 87 026602 (2001).CrossRefGoogle Scholar
23.Mattana, R., George, J.-M., Jaffrès, H., Nguyen Van Dau, F., Fert, A., Lépine, B., Guivaŕch, A., and Jézéquel, G., Phys. Rev. Lett. 90 166601 (2003).CrossRefGoogle Scholar
24.Chiba, D., Matsukura, F., and Ohno, H., 8th Symposium on the Physics and Application of Spin Related Phenomena in Semiconductors, Extended Abstracts (2002) p. 250.Google Scholar
25.Dietl, T., Semicond. Sci. Technol. 17 (2002) p. 377.CrossRefGoogle Scholar
26.Matsukura, F., Ohno, H., and Dietl, T., in Handbook of Magnetic Materials, Vol. 14, edited by Buschow, K.H.J. (Elsevier, Amsterdam, 2002) p. 1.Google Scholar
27.Vonsovskii, S.V., Magnetism (John Wiley & Sons, New York, 1974).Google Scholar
28.Zunger, A., in Solid State Physics, Vol. 39, edited by Ehrenreich, H. and Turnbull, D. (Academic Press, New York, 1986) p. 275.Google Scholar
29.Langer, J.M., Delerue, C., Lannoo, M., and Heinrich, H., Phys. Rev. B 38 (1988) p. 7723.CrossRefGoogle Scholar
30.Kacman, P., Semicond. Sci. Technol. 16 (2001) p. R25.CrossRefGoogle Scholar
31. In the literature on diluted magnetic semiconductors (see References 1–4), the sp-d exchange integrals are usually denoted by α and β according to α = Isd/N0 and β = Ipd/N 0, where N 0 is the total cation concentration.Google Scholar
32.Pearton, S.J., Abernathy, C.R.Overberg, M.E., Thaler, G.T., Norton, D.P., Theodoropoulou, N., Hebard, A.F., Park, Y.D., Ren, F., Kim, J., and Boatner, L.A., J. Appl. Phys. 93 (2003) p. 1.CrossRefGoogle Scholar
33.Szczytko, J., Bardyszewski, W., and Twardowski, A., Phys. Rev. B 64 075306 (2001).CrossRefGoogle Scholar
34.Fedorych, O.M., Hankiewicz, E.M., Wilamowski, Z., and Sadowski, J., Phys. Rev. B 66 045201 (2002).CrossRefGoogle Scholar
35.Dietl, T., in Proc. 5th Int. Conf. on Nitride Semiconductors, Nara, Japan, 2003, Phys. Status Solidi B, in press (e-print: http://arXivorg/abs/cond-mat/030511).Google Scholar
36.Yu, K.M., Walukiewicz, W., Wojtowicz, T., Kuryliszyn, I., Liu, X., Sasaki, Y., and Furdyna, J.K., Phys. Rev. B 65 201303(R) (2002).Google Scholar
37.De Boeck, J., Oesterholt, R., Van Esch, A., Bender, H., Bruynseraede, C., Van Hoof, C., and Borghs, G., Appl. Phys. Lett. 68 (1996) p. 2744.CrossRefGoogle Scholar
38.Máca, F. and Mašek, J., Phys. Rev. B 65 235209 (2002).CrossRefGoogle Scholar
39.Blinowski, J. and Kacman, P., Phys. Rev. B 67 121204(R) (2003).CrossRefGoogle Scholar
40.Hayashi, T., Hashimoto, Y., Katsumoto, S., and Iye, Y., Appl. Phys. Lett. 78 (2001) p. 1691.CrossRefGoogle Scholar
41.Ku, K.C., Potashnik, S.J., Wang, R.F., Chun, S.H., Schiffer, P., Samarth, N., Seong, M.J., Mascarenhas, A., Johnston-Halperin, E., Meyers, R.C., Gossard, A.C., and Awschalom, D.D., Appl. Phys. Lett. 82 (2003) p. 2302.CrossRefGoogle Scholar
42.Edmonds, K.W., Wang, K.Y., Campion, R.P., Neuman, A.C., Foxon, C.T., Gallagher, B.L., and Main, P.C., Appl. Phys. Lett. 81 (2002) p. 3010;CrossRefGoogle Scholar
Edmonds, K.W., Wang, K.Y., Campion, R.P., Neuman, A.C., Farley, N.R.S., Gallagher, B.L., and Foxon, C.T., Appl. Phys. Lett. 81 (2002) p. 4991.CrossRefGoogle Scholar
43.Chiba, D., Takamura, K., Matsukura, F., and Ohno, H., Appl. Phys. Lett. 82 (2003) p. 3020.CrossRefGoogle Scholar
44.Tanaka, M., Semicond. Sci. Technol. 17 (2002) p. 327.CrossRefGoogle Scholar
45.von Molnàr, S., Munekata, H., Ohno, H., and Chang, L.L., J. Magn. Magn. Mater. 93 (1991) p. 356.CrossRefGoogle Scholar
46.Satoh, Y., Okazawa, D., Nagashima, A., and Yoshino, J., Physica E 10 (2001) p. 196.CrossRefGoogle Scholar
47.Blinowski, J., Kacman, P., and Majewski, J.A., Phys. Rev. B 53 (1996) p. 9524; J. Cryst. Growth 159 (1996) p. 972.CrossRefGoogle Scholar
48.Zener, C., Phys. Rev. 81 (1951) p. 440; Phys. Rev. 83 (1951) p. 299.CrossRefGoogle Scholar
49.Yosida, K., Theory of Magnetism (Springer, Berlin, 1996).CrossRefGoogle Scholar
50.Zener, C., Phys. Rev. 82 (1951) p. 403.CrossRefGoogle Scholar
51.Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287 (2000) p. 1019.CrossRefGoogle Scholar
52.Dietl, T., Ohno, H., and Matsukura, F., Phys. Rev. B 63 195205 (2001).CrossRefGoogle Scholar
53.Skomski, R. and Coey, C.M.Permanent Magnetism (Institute of Physics, Bristol, 1999).Google Scholar
54.König, J., Jungwirth, T., and MacDonald, A.H., Phys. Rev. B 64 184423 (2001).CrossRefGoogle Scholar
55.Dietl, T., König, J., and MacDonald, A.H., Phys. Rev. B 64 241201(R) (2001).CrossRefGoogle Scholar
56.Cibert, J., Ferrand, D., Boukari, H., Tatarenko, S., Wasiela, A., Kossacki, P., and Dietl, T., Physica E 13 (2002) p. 489.CrossRefGoogle Scholar
57.Andrearczyk, T., Jaroszyński, J., Sawicki, M., Van, L. Khoi, Dietl, T., Ferrand, D., Bourgognon, C., Cibert, J., Tatarenko, S., Fukumura, T., Jin, Z., Koinuma, H., and Kawasaki, M., in Proc. 25th Int. Conf on Physics of Semiconductors, edited by Miura, N. and Ando, T. (Springer, Berlin, 2001) p. 235.Google Scholar
58.Jaroszyński, J., Andrearczyk, T., Karczewski, G., Wróbel, J., Wojtowicz, T., Papis, E., Kamińska, E., Piotrowska, A., Popović, D., and Dietl, T., Phys. Rev. Lett. 89 266802 (2002).CrossRefGoogle Scholar
59.Jungwirth, T., König, J., Sinova, J., Kucera, J., and MacDonald, A.H., Phys. Rev. B 66 012402 (2002).CrossRefGoogle Scholar
60.Park, Y.D., Hanbicki, A.T., Erwin, S.C., Hellberg, C.S., Sullivan, J.M., Mattson, J.E., Ambrose, T.F., Wilson, A., Spanos, G., and Jonker, B.T., Science 295 (2002) p. 652.Google Scholar
61.Wojtowicz, T., Cywiński, G., Lim, W.L., Liu, X., Dobrowolska, M., Furdyna, J.K., Yu, K.M., Walukiewicz, W., Kim, G.B., Cheon, M., Chen, X., Wang, S.M., and Luo, H., Appl. Phys. Lett. 82 (2003) p. 4310.CrossRefGoogle Scholar
62.Munekata, H., Zaslavsky, A., Fumagalli, P., and Gambino, R.J., Appl. Phys. Lett. 63 (1993) p. 2929.CrossRefGoogle Scholar
63.Shen, A., Ohno, H., Matsukura, F., Sugawara, Y., Akiba, N., Kuroiwa, T., Oiwa, A., Endo, A., Katsumoto, S., and Iye, Y., J. Cryst. Growth 175/176 (1997) p. 1069.CrossRefGoogle Scholar
64.Takamura, K., Matsukura, F., Chiba, D., and Ohno, H., Appl. Phys. Lett. 81 (2002) p. 2590.CrossRefGoogle Scholar
65.Sawicki, M., Matsukura, F., Idziaszek, A., Schott, G.M., Karczewski, G., Ruester, C., Schmidt, G., Molenkamp, L.W., and Dietl, T., J. Supercond./Novel Magn. 16 (2003) p. 3 (e-print: http://arXivorg/abs/cond-mat/0212511).Google Scholar
66.Shono, T., Hasegawa, T., Fukumura, T., Matsukura, F., and Ohno, H., Appl. Phys. Lett. 77 (2000) p. 1363.CrossRefGoogle Scholar
67.Welp, U., Vlasko-Vlasov, V.K., Liu, X., Furdyna, J.K., and Wojtowicz, T., Phys. Rev. Lett. 90 167206 (2003).CrossRefGoogle Scholar
68.Jungwirth, T., Sinova, J., Wang, K.Y., Edmonds, K.W., Campion, R.P., Gallagher, B.L., Foxon, C.T., Nu, Q., and MacDonald, A.H., Appl. Phys. Lett. 83 (2003) p. 320.CrossRefGoogle Scholar
69.Sato, K. and Katayama-Yoshida, H., Semicond. Sci. Technol. 17 (2002) p. 367.CrossRefGoogle Scholar
70.Saito, H., Zayets, V., Yamagata, S., and Ando, K., Phys. Rev. Lett. 90 207202 (2003).Google Scholar
71.Karczewski, G., Sawicki, M., Ivanov, V., Ruester, C., Grabecki, G., Matsukura, F., Molenkamp, L.W., and Dietl, T., J. Supercond./Novel Magn. 16 (2003) p. 55.CrossRefGoogle Scholar
72.Kamatani, T. and Akai, H., Physica E 10 (2001) p. 157.CrossRefGoogle Scholar