Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-05T15:19:32.394Z Has data issue: false hasContentIssue false
  • English
  • Français

In Situ SEM Observations of Electromigration Voids in Al Lines under Passivation

Published online by Cambridge University Press:  29 November 2013

Paul A. Flinn ,
Michael C. Madden  and
Thomas N. Marieb
Get access

Extract

Since the early work of Ilan Blech and Gene Meieran more than 20 years ago, electromigration (mass transport produced in a metallic conductor by current flow) has been recognized as an important reliability hazard for solid-state electronic devices. The continuing shrinkage of dimensions in VLSI devices has resulted in a continuing increase in the current density in the interconnection lines and a corresponding increase in the potential electromigration hazard. Although there have been improvements in the materials and structures used for interconnections, notably the addition of copper to aluminum and the use of layered structures, the provision of an adequate margin of safety has become increasingly difficult and is an important constraint on both device design and process development.

Type
Materials Science in the Electron Microscope
Information
MRS Bulletin , Volume 19 , Issue 6 , June 1994 , pp. 51 - 55
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Blech, I.A. and Meieran, E.S., Appl. Phys. Lett. 11 (1967) p. 263.CrossRefGoogle Scholar
2.Thompson, C.V. and Lloyd, J.R., MRS Bulletin, XVIII (12) (1993) p. 19.CrossRefGoogle Scholar
3.Black, J.R., in Proc. 6th Annu. Int. Reliability Phys. Symp. (IEEE, New York, 1967) p. 148.Google Scholar
4.Black, J.R., IEEE Trans. Electron Devices ED-16 (1969) p. 338.CrossRefGoogle Scholar
5.Longworth, H.P. and Thompson, C.V., in Materials Reliability in Microelectronics II, edited by Thompson, C.V. and Lloyd, J.R. (Mater. Res. Soc. Symp. Proc. 265, Pittsburgh, PA, 1992) p. 95.Google Scholar
6.Longworth, H.P. and Thompson, C.V., Appl. Phys. Lett. 60 (1992) p. 2219.CrossRefGoogle Scholar
7.Lloyd, J.R., in Materials Reliability in Microelectronics II, edited by Thompson, C.V. and Lloyd, J.R. (Mater. Res. Soc. Symp. Proc. 265, Pittsburgh, PA, 1992) p. 177.Google Scholar
8.Levine, E. and Kitcher, J., in Proc. 22nd Int. Reliability Symp. (IEEE, 1984) p. 242.Google Scholar
9.Castano, E., Maiz, J., Flinn, P., and Madden, M., Appl. Phys. Lett. 59 (1991) p. 129.CrossRefGoogle Scholar
10.Besser, P.R., Madden, M.C., and Flinn, P.A., J. Appl. Phys. 72 (1992) p. 3797.CrossRefGoogle Scholar
11.Bergesen, P., Korhonen, M.A., Brown, D.D., and Li, C., in Stress Induced Phenomena in Metallization, edited by Li, C., Totta, P., and Ho, P.S. (American Institute of Physics, Conf. Proc. 263, New York, 1992) p. 219.Google Scholar
12.Nix, W. and Sauter, A.I., Stress Induced Phenomena in Metallization, edited by Li, C., Totta, P., and Ho, P.S. (American Institute of Physics, Conf. Proc. 263, New York, 1992) p. 89.Google Scholar
13.Nix, W.D. and Arzt, E., Metall Trans. A 23A (1992) p. 2007.CrossRefGoogle Scholar
14.Madden, M.C., Abratowski, E.V., Marieb, T., and Flinn, P.A., in Materials Reliability in Microelectronics II, edited by Thompson, C.V. and Lloyd, J.R. (Mater. Res. Soc. Symp. Proc. 265, Pittsburgh, PA, 1992) p. 33.Google Scholar
15.Marieb, T., Bravman, J.C., Flinn, P.A., Gardner, D.S., and Madden, M., Appl. Phys. Lett. (1994) in press.Google Scholar
16.Marieb, T., PhD. thesis, Stanford University, 1994.Google Scholar