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Material Properties of III–V Semiconductors for Lasers and Detectors

Published online by Cambridge University Press:  31 January 2011

Charles W. Tu  and
Paul K.L.Yu
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Abstract

We describe how the material properties of III–V semiconductors, including bandgap, band structure, band offset, refractive index, absorption, and ionization coefficient, are exploited for lasers and photodetectors for fiber-optic communications. The material systems discussed for 1.3 μm and 1.55 μm light emission include the more traditional GaInAsP and AlGaInAs on InP, the more recently investigated GaInAs quantum dots and low-bandgap GaInNAs on GaAs as well as GaAsSb/GaAs Type II structures, and the potentially viable GaN/AlGaN from intersubband transitions (i.e., between quantized conduction-band energy levels). As an example of photodetector applications, GaInAsP/InP and wafer-fused GaInAs/Si are discussed in terms of gain and noise factor for use in avalanche photodiodes with separate absorption and multiplication regions.

Keywords

chemical vapor depositioncompound semiconductorslasersmolecular-beam epitaxy (MBE)optical communicationsoptoelectronic materialsphotodetectorsphotonic materialswafer fusion
Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 5: Photonic Materials for Optical Communications , May 2003 , pp. 345 - 349
Copyright
Copyright © Materials Research Society 2003

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References

1.Pearsall, T.P., ed., GaInAsP Alloy Semiconductors (John Wiley & Sons, New York, 1982).Google Scholar
2.Bhattacharya, P., Semiconductor Optoelectronic Devices (Prentice Hall, Upper Saddle River, NJ, 1997).Google Scholar
3.Tu, C.W., Bi, W.G., Ma, Y., Zhang, J.P., Wang, L.W., and Ho, S.T., IEEE J. Sel. Top. Quantum Electron. 4 (1998) p. 510.CrossRefGoogle Scholar
4.Bi, W.G., Ma, Y., Zhang, J.P., Wang, L.W., Ho, S.T., and Tu, C.W., IEEE Photon. Technol. Lett. 9 (1997) p. 1072.CrossRefGoogle Scholar
5.Zah, C.-E., Bhat, R., Pathak, B.N., Favire, F., Lin, W., Wang, M.C., Andreadakis, N.C., Hwang, D.M., Koza, M.A., Lee, T.P., Wang, Z., Darby, D., Flanders, D., and Hsieh, J.J., IEEE J. Quantum Electron. 30 (1994) p. 511.Google Scholar
6.Anan, T., Yamada, M., Tokutome, K., and Sugou, S., Electron. Lett. 33 (1997) p. 1048.CrossRefGoogle Scholar
7.Shchekin, O.B. and Deppe, D.G., Appl. Phys. Lett. 80 (2002) p. 2758.CrossRefGoogle Scholar
8.Shchekin, O.B. and Deppe, D.G., Appl. Phys. Lett. 80 (2002) p. 3277.CrossRefGoogle Scholar
9.Kondow, M., Uomi, K., Niwa, A., Kitatani, T., Watahiki, S., and Yazawa, Y., Jpn. J. Appl. Phys. 35 (1996) p. 1273.CrossRefGoogle Scholar
10.Shan, W., Walukiewicz, W., Yu, K.M., Ager, J.W., Haller, E.E., Geisz, J.F., Friedman, D.J., Olson, J.M., Kurtz, S.R., Xin, H.P., and Tu, C.W., Phys. Status Solidi B 223 (2001) p. 75.3.0.CO;2-1>CrossRefGoogle Scholar
11.Zhang, S.B. and Zunger, A., Appl. Phys. Lett. 71 (1997) p. 677.CrossRefGoogle Scholar
12.Alexandre, F., Gouardes, E., Gauthier-Lafaye, O., Bouadma, N., Vuong, A., and Thedrez, B., J. Mater. Sci.: Mater. Electron. 13 (2002) p. 633.Google Scholar
13.Kitatani, T., Nakahara, K., Kondow, M., Uomi, K., and Tanaka, T., Jpn. J. Appl. Phys. 39 (2000) p. L86.CrossRefGoogle Scholar
14.Choquette, K.D., Klem, J.F., Fischer, A.J., Blum, O., Allerman, A.A., Fritz, I.J., Kurtz, S.R., Breiland, W.G., Sieg, R., Geib, K.M., Scott, J.W., and Naone, R.L., Electron. Lett. 36 (2000) p. 1388.CrossRefGoogle Scholar
15.Steinle, G., Riechert, H., and Egorov, A.Y., Electron. Lett. 37 (2001) p. 93.CrossRefGoogle Scholar
16.Gambin, V., Ha, W., Wistey, M., Yuen, H., Bank, S.R., Kim, S.M., and Harris, J.S., IEEE J. Sel. Top. Quantum Electron. 8 (2002) p. 795.CrossRefGoogle Scholar
17.Gollub, D., Fischer, M., and Forchel, A., Electron. Lett. 38 (2002) p. 1183.CrossRefGoogle Scholar
18.Sopanen, M., Xin, H.P., and Tu, C.W., Appl. Phys. Lett. 76 (2000) p. 994.CrossRefGoogle Scholar
19.Chiu, Y.S., Ya, M.H., Su, W.S., and Chen, Y.F., J. Appl. Phys. 92 (2002) p. 5810.CrossRefGoogle Scholar
20.Peter, M., Winkler, K., Maier, M., Herres, N., Wagner, J., Fekete, D., Bachem, K.H., and Richards, D., Appl. Phys. Lett. 67 (1995) 2639.CrossRefGoogle Scholar
21.Ryu, S.-W. and Dapkus, P.D., Electron. Lett. 38 (2002) p. 564.CrossRefGoogle Scholar
22.Yamada, M., Anan, T., Tokutome, K., Kamei, A., Nishi, K., and Sugou, S., IEEE Photon. Technol. Lett. 12 (2000) p. 774.CrossRefGoogle Scholar
23.Liu, P.-O., Lee, M.-H., Lin, H.-H., and Chen, J.-R., Electron. Lett. 38 (2002) p. 1354.CrossRefGoogle Scholar
24.Faist, J., Capasso, F., Sivco, D.L., Hutchinson, A.L., and Cho, A.Y., Science 264 (1994) p. 553.CrossRefGoogle Scholar
25.Gmachl, C., Ng, H.M., and Cho, A.Y., Appl. Phys. Lett. 77 (2000) p. 334.CrossRefGoogle Scholar
26.Gmachl, C., Ng, H.M., Chu, S.N.G., and Cho, A.Y., Appl. Phys. Lett. 77 (2000) p. 3722.CrossRefGoogle Scholar
27.Komobuchi, H. and Ando, T.A., IEEE Trans. Electron Devices 37 (1990) p. 1861.CrossRefGoogle Scholar
28.Emmons, R.B., J. Appl. Phys. 38 (1967) p. 3705.CrossRefGoogle Scholar
29.Conradi, J., Solid-State Electron. 17 (1974) p. 99.CrossRefGoogle Scholar
30.McIntyre, R.J., IEEE Trans. Electron Devices 13 (1966) p. 164.CrossRefGoogle Scholar
31.Anderson, C.L. and Crowell, C.R., Phys. Rev. B 5 (1972) p. 2267.CrossRefGoogle Scholar
32.Stillman, G.E. and Wolfe, C.M., in Semiconductor and Semimetals, Vol. 12, edited by Williardson, P.K. and Beers, A.C. (Academic Press, New York, 1977) p. 291.CrossRefGoogle Scholar
33.Susa, N., Nakagame, H., Ando, H., and Kanbe, H., IEEE J. Quantum Electron. 17 (1981) p. 243.CrossRefGoogle Scholar
34.Tarof, L.E., Yu, J., Bruce, R., Knight, D.G., Baird, T., and Oosterbrink, B., IEEE Photon. Technol. Lett. 5 (1993) p. 672.CrossRefGoogle Scholar
35.Kagawa, T., Kawamura, Y., Asai, H., and Naganuma, M., Appl. Phys. Lett. 57 (1990) p. 1895.CrossRefGoogle Scholar
36.Wang, S., Sidhu, R., Zheng, X.G., Li, X., Sun, X., Holmes, A.L. Jr, and Campbell, J.C., IEEE Photon. Technol. Lett. 13 (2001) p. 1346.CrossRefGoogle Scholar
37.Wang, S., Hurst, J.B., Ma, F., Sidhu, R., Sun, X., Zheng, X.G., Holmes, A.L. Jr, Campbell, J.C., Huntington, A., and Coldren, L.A., in Proc. 2002 IEEE, LEOS Annu. Meeting, Vol. 2 (IEEE Lasers and Electro-Optics Society, Piscataway, NJ, 2002) p. 488.Google Scholar
38.Liau, Z.L. and Mull, D.E., Appl. Phys. Lett. 56 (1990) p. 737.CrossRefGoogle Scholar
39.Kang, Y., Mages, P., Clawson, A.R., Yu, P.K.L., Bitter, M., Pan, Z., Pauchaud, A., Hummel, S., and Lo, Y.H., IEEE Photon. Technol. Lett. 14 (2002) p. 1593.CrossRefGoogle Scholar