Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-23T02:19:20.110Z Has data issue: false hasContentIssue false

Response of a Material: From Single Ions to Experimental Times and Fluences

Published online by Cambridge University Press:  29 November 2013

Get access

Extract

The preceding article by Davies treated the behavior of single ions as they slow down in a solid, colliding with atoms of the solid and often transferring enough energy to initiate atomic displacement cascades. For a 200 keV As ion with a speed ~108 cm/s and a range in Si of ~ 2 × 10−5 cm, the cascade is completed in less than 10−12 s. The small volume excited in the cascade relaxes over 15 decades or more in time in a series of increasingly deliberate steps. The experimental evidence for most of these decades is indirect. No probes with sufficient spatial and time resolution exist to examine the spatial and temporal evolution of collision cascades created by individual incident ions. The first few decades in time have been followed in metals by molecular dynamics (MD) calculations and also approximated by continuum theory. The results of MD calculations for 5 keV cascades in Ni are shown in Figure 1. The behavior is in-terpreted as indicative of local “melting,” consistent with the concept of a “thermal spike” in the material. Extension of MD calculations to times of nanoseconds and longer is still prohibitively expensive in computer time, and application to covalently bonded systems, where the interatomic forces are much more complex than in metals, has not yet been reported.

As Davies has noted, the atoms of the cascade rapidly lose their high vibrational excitation to atoms in the surrounding material, and in only a few picoseconds the system cools. This constitutes a very rapid thermal quench—slower only than the quench associated with deposition of individual atoms (or small atomic clusters) on a cold substrate. The quench may produce a small volume of material with a different phase than its surrounding. For example, a small volume of “hot” Si atoms may be highly disordered and may quench to produce a small amorphous Si region in a crystalline Si matrix.

Type
Ion-Assisted Processing of Electronic Materials
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.de la Rubia, T. Diaz, Averback, R.S., and Horngming, H., Benedek, R., J. Mater. Res. 4 (1989), p. 579.CrossRefGoogle Scholar
2.Sigmund, P., Appl. Phys. Lett. 14 (1969), p. 114.CrossRefGoogle Scholar
3.Davies, J.A. in Ion Implantation and Beam Processing, edited by Williams, J.S. and Poate, J.M. (Academic Press, Sydney, 1984), p. 81.CrossRefGoogle Scholar
4.Vineyard, G.H., Radiat. Eff. 29 (1966) p. 245.CrossRefGoogle Scholar
5.Corbett, J.W., Karins, J.P., and Tan, T.Y., Nucl. Instrum. Methods 182/183 (1981) p. 457.CrossRefGoogle Scholar
6.Stein, H.J.et al., Radiat. Eff. 6 (1970) p. 19.CrossRefGoogle Scholar
7.Brower, K.L. and Beezhold, W., J. Appl. Phys. 43 (1972) p. 3499.CrossRefGoogle Scholar
8.Howe, L.M. and Rainville, M.H., Nucl. Instrum. Methods 182/183 (1981) p. 143.CrossRefGoogle Scholar
9.Haynes, T.E. and Holland, O.W., Appl. Phys. Lett. 59 (1991) p. 452.CrossRefGoogle Scholar
10.Michel, A.U., Rausch, W., Ronsheim, P.A., and Kastel, R.H., Appl. Phys. Lett. 50 (1987) p. 416.CrossRefGoogle Scholar
11.Nygren, E., Williams, J.S., Pogany, A., Elliman, R.G., Olson, G.L., and McCallum, J.C., in Beam Solid Interactions and Transient Processes, edited by Thompson, M.O., Picraux, S.T., and Williams, J.S. (Mater. Res. Soc. Symp. Proc. 74, Pittsburgh, PA, 1987) p. 307.Google Scholar
12.Seitz, F. and Koehler, J.S., Solid State Phys. 2 (1956) p. 107.Google Scholar
13.Lark-Horovitz, K., in Semiconducting Materials (Butterworth Scientific, London, 1951) p. 47.Google Scholar
14.Vook, F.L., in Radiation Damage and Defects in Semiconductors, edited by Whitehouse, J.E. (The Institute of Physics, London and Bristol, 1973) p. 60.Google Scholar
15.Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M., and Jacobson, D.C., Appl. Phys. Lett. 42 (1983) p. 698.CrossRefGoogle Scholar
16.Morehead, E.W. and Crowder, B.L., Radiat. Eff. 6 (1970) p. 27.CrossRefGoogle Scholar
17.Sealy, L., Barklie, R.C., Reeson, K.J., Brown, W.L., and Jacobson, D.C., Nucl. Instrum. Methods Phys. Res. B 62 (1992) p. 384.CrossRefGoogle Scholar
18.Swanson, M.L., Parsons, J.R., and Hoelke, C.W., Radiat. Eff. 9 (1971) p. 249.CrossRefGoogle Scholar
19.Baruch, P., J. Appl. Phys. 32 (1961) p. 653.CrossRefGoogle Scholar
20.Bode, M., Ourmazd, A., Cunningham, J., and Hong, M., Phys. Rev. Lett. 67 (1991) p. 843.CrossRefGoogle Scholar
21.Ourmazd, A., Taylor, D.W., Cunningham, J., and Tu, C.W., Phys. Rev. Lett. 62 (1989) p. 933.CrossRefGoogle Scholar
22.Ourmazd, A., Baumann, F.H., Bode, M., and Kim, Y., Ultramicroscopy 34 (1990) p. 237.CrossRefGoogle Scholar
23.Tersoff, J., Phys. Rev. Lett. 65 (1990) p. 887.CrossRefGoogle Scholar