Researchers in the US and Korea say they have developed a new way to make a flexible, resistive random access memory (RAM) device in a room-temperature process – something that has proved difficult to do until now. The device, which is based on nanoporous tungsten oxide, is a bipolar switch and has a high on/off current ratio of more than 10⁵. It can also be bent and unbent over 10³ cycles without suffering any significant loss in performance.

Read the full article here.