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Nanoscience & Nanomaterials | Carbon

Scientists: Carbon Nanotubes Would Outperform Silicon Transistors at the Same Scale

By Dexter Johnson January 22, 2017
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CNT field-effect transistors having a critical dimension - the gate length - of just 5 nm that would outperform silicon-based CMOS FETs at the same scale.

Read the article in IEEE Spectrum.

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