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A pathway to compound semiconductor additive manufacturing

Published online by Cambridge University Press:  27 August 2019

Jarod C. Gagnon ,
Michael Presley ,
Nam Q. Le Open the ORCID record for Nam Q. Le [Opens in a new window] ,
Timothy J. Montalbano  and
Steven Storck
Jarod C. Gagnon*
Affiliation:
Johns Hopkins University Applied Physics Laboratory, 11100 Johns Hopkins Rd., Laurel, MD 20723, USA
Michael Presley
Affiliation:
Johns Hopkins University Applied Physics Laboratory, 11100 Johns Hopkins Rd., Laurel, MD 20723, USA
Nam Q. Le
Affiliation:
Johns Hopkins University Applied Physics Laboratory, 11100 Johns Hopkins Rd., Laurel, MD 20723, USA
Timothy J. Montalbano
Affiliation:
Johns Hopkins University Applied Physics Laboratory, 11100 Johns Hopkins Rd., Laurel, MD 20723, USA
Steven Storck
Affiliation:
Johns Hopkins University Applied Physics Laboratory, 11100 Johns Hopkins Rd., Laurel, MD 20723, USA
*
Address all correspondence to Jarod C. Gagnon at Jarod.Gagnon@jhuapl.edu
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Abstract

The rise of additive manufacturing (AM) has enabled the rapid production of complex part geometries across multiple material domains. To date, however, AM of inorganic semiconductor materials has not been fully realized due to the difficulty of forming single-crystal materials with traditional AM processes. Here, we demonstrate a novel semiconductor synthesis method using a combination of liquid and gas precursors to additively print gallium nitride. Growth rates of 1–2 µm/min are demonstrated in printed regions while maintaining epitaxial alignment with the substrate. We also outline critical variables for the future development, improvement, and implementation of the proposed process.

Type
Research Letters
Information
MRS Communications , Volume 9 , Issue 3 , September 2019 , pp. 1001 - 1007
Copyright
Copyright © The Author(s) 2019 

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