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About the Luminescence Mechanisms of Composite a-Si:nc-Si System Obtained by Ion-Beam Amorphization in the Wide Dose Region

Published online by Cambridge University Press:  21 March 2011

David I. Tetelbaum ,
Alexander A. Ezhevskii ,
Alexey N. Mikhaylov ,
Mikhail Yu. Lebedev ,
Yuliya A. Mendeleva ,
Roman G. Ershov  and
Sergey V. Morozov
David I. Tetelbaum
Affiliation:
Physico-Technical Research Institute of University of Nizhny Novgorod, 23/3 Gagarin prospect, Nizhny Novgorod, 603950, RUSSIA
Alexey N. Mikhaylov
Affiliation:
Physico-Technical Research Institute of University of Nizhny Novgorod, 23/3 Gagarin prospect, Nizhny Novgorod, 603950, RUSSIA
Mikhail Yu. Lebedev
Affiliation:
University of Nizhny Novgorod, 23 Gagarin prospect, Nizhny Novgorod, 603950, RUSSIA
Yuliya A. Mendeleva
Affiliation:
University of Nizhny Novgorod, 23 Gagarin prospect, Nizhny Novgorod, 603950, RUSSIA
Roman G. Ershov
Affiliation:
University of Nizhny Novgorod, 23 Gagarin prospect, Nizhny Novgorod, 603950, RUSSIA
Sergey V. Morozov
Affiliation:
Institute for Physics of Microstructures of Russian Academy of Science, GSP-105, Nizhny Novgorod, 603950, RUSSIA
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Abstract

Red/near-infrared photoluminescence (PL) of silicon irradiated by ions for wide dose range is investigated. The results are presented obtained for doses near amorphization threshold, where PL is associated with the formation of composite structure composed of nanocrystals (quantum dots) embedded into amorphized matrix and for doses that are strongly larger than amorphization threshold. The PL in this case is caused by formation of nanocrystals due to recrystallization of amorphous layer and penetration of stresses behind the border of this layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.36
Copyright
Copyright © Materials Research Society 2004

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References

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