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Accommodation of Substrate Steps in the Growth of CoSi2 on (lll)Si

Published online by Cambridge University Press:  25 February 2011

A. C. Daykin ,
C. J. Kiely  and
R. C. Pond
A. C. Daykin
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, U.K.
C. J. Kiely
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, U.K.
R. C. Pond
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, U.K.
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Abstract

Thin films of CoSi2 have been grown on (111) substrates of Si, and studied using transmission electron microscopy. In 2nm films, steps initially on the substrate were found to be transformed into interfacial dislocations following deposition of the films. The Burgers vectors of the dislocations were consistent with ½<101>, which includes a component ½[111] perpendicular to the interface. The contrast behaviour of these dislocations exhibited characteristic effects, which are consistent with the short-range displacement field of the defects resembling that of a disclination dipole.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 3
Copyright
Copyright © Materials Research Society 1992

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References

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