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Activation Volume for Inelastic Deformation in Polycrystalline Ag Films at Low Temperatures

Published online by Cambridge University Press:  10 February 2011

Mauro J. Kobrinsky  and
Carl V. Thompson
Mauro J. Kobrinsky
Affiliation:
kobrinsm@mit.edu
Carl V. Thompson
Affiliation:
Materials Science and Eng. Dept., Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA, USA 02139.
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Abstract

The low temperature (T < 100 °C) inelasticity of polycrystalline Ag thin films on thick substrates has been studied. In-situ Transmission Electron Microscopy and stress-relaxation experiments indicate that thermally-activated glide of dislocations through forest-dislocation obstacles is the dominant inelastic mechanism. Values of the activation volume for inelastic deformation obtained with both experiments are reported. The mean distance between obstacles along the length of moving dislocations was found to be significantly smaller than the thickness of the film and the average grain size, which explains why current models for dislocationmediated plasticity underestimate the strength of thin films. Results from these experiments on Ag are expected to be representative of other metallic thin films (e.g. Cu and Au) on substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 57
Copyright
Copyright © Materials Research Society 2000

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References

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