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Aligned, Coexisting Liquid and Solid Regions in Pulsed and CW Laser Annealing of Si

Published online by Cambridge University Press:  15 February 2011

R. J. Nemanich ,
D. K. Biegelsen  and
W. G. Hawkins
R. J. Nemanich
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
W. G. Hawkins
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Aligned, coexisting liquid and solid regions are observed in cw laser annealing of polycrystalline Si films on quartz substrates. These stripe patterns are the precursors of surface topography that exists after cooling. It is proposed that a similar situation exists in the pulse annealing process. A calculation of the temperature evolution which assumes stripe symmetry and kinetic restraints of the crystallization process has been carried out. These calculations indicate a lattice temperature of between 1100 and 1300 K, 10 nsec after the sample has fully solidified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 211
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Permanent address: Xerox, Webster Research Center, Webster, NY 14580

References

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