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Aluminum-Induced Crystallization of PECVD Amorphous Silicon

Published online by Cambridge University Press:  21 March 2011

Kenneth Jenq ,
Shawn S. Chang ,
Yaguang Lian ,
Grant Z. Pan  and
Yahya Rahmat-Samii
Kenneth Jenq
Affiliation:
Microfabrication Laboratory
Shawn S. Chang
Affiliation:
Microfabrication Laboratory
Yaguang Lian
Affiliation:
Microfabrication Laboratory
Grant Z. Pan
Affiliation:
Microfabrication Laboratory
Yahya Rahmat-Samii
Affiliation:
Antenna Research, Analysis and Measurement Laboratory, Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095-1594.
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Abstract

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) in a conventional furnace with N2 protection has been studied at reaction temperatures ranging from 200 to 500°C by using optical microscopy, and transmission and scanning electron microscopy. The a-Si and Al layers were deposited with plasma-enhanced chemical vapor deposition (PECVD) and electron beam evaporation, respectively. The structures in the study are Al/a-Si and a-Si/Al on Si or glass wafers coated with 3000 Å PECVD SiO2. It was found that Al induces crystallization of a-Si for both Al/a-Si and a-Si/Al structures by exchanging positions of Al and Si layer through diffusion of Si into Al and the grain size of crystallized Si (c-Si) increases with the decrease of AIC temperature. AIC for Al/a-Si structures starts at a temperature as low as 200°C, which is 100°C lower than that for a-Si/Al structures. Kinetics analysis found that the activation energies are 1.76 eV and 1.65 eV for both Al/a-Si and a-Si/Al structures, respectively. The quality of AIC c-Si depends on the order, thickness and thickness ratio of a-Si to Al. Microstructural observations indicated that the c-Si for Al/a-Si structures is better and more suitable for use in fabrication of thin film transistors (TFTs) than that for a-Si/Al structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.20
Copyright
Copyright © Materials Research Society 2004

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References

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