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Ambipolar Diffusion Lengths, Lamb, and Steady-State Photoconductivity, σph, in B2H6 Doped Μc-Si

Published online by Cambridge University Press:  16 February 2011

S.M. Cho ,
S.S. He  and
G. Lucovsky
S.M. Cho
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 29695–8202
S.S. He
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 29695–8202
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 29695–8202
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Abstract

We have compared the photo-transport properties of thin films of B-compensated Μc-Si and device-grade a-Si:H prepared by remote plasma-enhanced chemical-vapor deposition (PECVD). The steady state photocarrier grating technique was used to determine the ambipolar diffusion lengths, Lamb. The conductivity of the μc-Si:B thin films changed from n-type to p-type as the B2H6 fraction in the B2H6/SiH4 source gas mixture was increased. The steady state photoconductivity, σph, decreased as B2H6 was initially introduced and the material changed from n-type to intrinsic; σph then increased as the material converted to p-type. Lamb displayed a complementary behavior with a maximum value at the approximate compensation point between the n-type and p-type conductivity regions. The steady-state photoconductivity and Lamb did not show any significant photo-induced degradations under intense illumination. Finally, the photoconductivity and Lamb displayed a strong dependence on sample thickness which is associated with Fermi level pinning at the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 583
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Williams, M.J., Wang, C., and Lucovsky, G., MRS Symp. Proc. 219, 389 (1991).CrossRefGoogle Scholar
2. He, S.S., Williams, M.J., Stephens, D.J. and Lucovsky, G., J. of Non-Cryst. Solids 164–166, 1263 (1993).Google Scholar
3. Balberg, I. and Weisz, S.Z., Appl. Phys. Lett. 59, 1726 (1991).CrossRefGoogle Scholar
4. Sauvain, E., Hubin, J., Shah, A., Proceedings of the 21 th IEEE Photovoltaic Specialists Conferences, Orlando, Vol. 2, p. 1560–1563 (1990).Google Scholar
5. Ritter, D., Weiser, K., and Zeldov, E., J. Appl. Phys. 62, 4563 (1987).CrossRefGoogle Scholar
6. Rose, A., Concepts in Photoconductivity and Allied Problems (R.E. Krieger, Huntington, N.Y., 1978).Google Scholar
7. Sauvain, E., Shah, A., Hubin, J. and Pipoz, P., J. Non-Cryst. Solids 137&138, 475 (1991).CrossRefGoogle Scholar
8. Simmoms, J.G. and Taylor, G.W., Phys. Rev. B 4, 502 (1971);CrossRefGoogle Scholar
Taylor, G.W. and Simmons, J.G., J. Non-Cryst. Solids 8–10, 940 (1972).CrossRefGoogle Scholar
9. Parsons, G.N., Kusano, C. and Lucovsky, G., J. Vac. Sci. Technol. A 5, 1655 (1987).CrossRefGoogle Scholar
10. Yang, L., Balberg, I., Caltalano, A. and Bennett, M., MRS Symp. Proc. 192, 243 (1990).CrossRefGoogle Scholar
11. Wang, U.C. and Lucovsky, G., Proc. 21st IEEE Photovoltaic Spec. Conf. (IEEE, NY, 1990), Vol. 2, p. 1614.Google Scholar