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Ambipolar Diffusion Lengths, Lamb, and Steady-State Photoconductivity, σph, in B2H6 Doped Μc-Si

Published online by Cambridge University Press:  16 February 2011

S.M. Cho ,
S.S. He  and
G. Lucovsky
S.M. Cho
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 29695–8202
S.S. He
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 29695–8202
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 29695–8202
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Abstract

We have compared the photo-transport properties of thin films of B-compensated Μc-Si and device-grade a-Si:H prepared by remote plasma-enhanced chemical-vapor deposition (PECVD). The steady state photocarrier grating technique was used to determine the ambipolar diffusion lengths, Lamb. The conductivity of the μc-Si:B thin films changed from n-type to p-type as the B2H6 fraction in the B2H6/SiH4 source gas mixture was increased. The steady state photoconductivity, σph, decreased as B2H6 was initially introduced and the material changed from n-type to intrinsic; σph then increased as the material converted to p-type. Lamb displayed a complementary behavior with a maximum value at the approximate compensation point between the n-type and p-type conductivity regions. The steady-state photoconductivity and Lamb did not show any significant photo-induced degradations under intense illumination. Finally, the photoconductivity and Lamb displayed a strong dependence on sample thickness which is associated with Fermi level pinning at the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 583
Copyright
Copyright © Materials Research Society 1994

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References

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