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Ambipolar Field Effect Transistor

Published online by Cambridge University Press:  28 February 2011

H. Pfleiderer  and
W. Kusian
H. Pfleiderer
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 München 83 Federal Republic of Germany
W. Kusian
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 München 83 Federal Republic of Germany
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Abstract

The characteristics of a thin-film transistor using an amorphous-silicon film are presented. The appearance of electron and hole channels is made possible by ohmic source and drain contacts. A theoretical model explains the phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 361
Copyright
Copyright © Materials Research Society 1985

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References

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