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Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia

Published online by Cambridge University Press:  01 February 2011

Tadao Hashimoto
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Kenji Fujito
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Feng Wu
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Benjamin A. Haskell
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Paul T. Fini
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
James S. Speck
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
Shuji Nakamura
Affiliation:
ERATO/JST UCSB group, Santa Barbara, CA 93106–5050, USA
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Abstract

Ammonothermal growth of GaN was studied to determine its eventual utility for mass production of GaN bulk crystals. Dissolution of GaN in supercritical ammonia with 1 M NaNH2 was investigated through a weight loss method. The time dependence of the weight loss was examined at 500°C and 525°C. Since the weight loss did not reach saturation as a function of time, the solubility limit was not realized. However, experiments demonstrate that GaN has a negative temperature dependence of solubility in supercritical ammonobasic solutions. Based on this result, GaN was grown via fluid transport from metallic Ga to a free-standing GaN single crystal seed by placing the seed crystal in a higher temperature zone and the nutrient in a lower temperature zone. GaN films with thickness of 5 μm (Ga face) and 4 μm (N face) were simultaneously grown on the seed in three days. The surface morphology, optical property, and defect density were found to be different for films on Ga face and N face.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

[1] Porowski, S., MRS Internet J. of Nitride Semicond. Res. 4S1, (1999) G1.3 Google Scholar
[2] Inoue, T., Seki, Y., Oda, O., Kurai, S., Yamada, Y., and Taguchi, T., Phys. Stat. Sol. (b) 223 (2001) 15 Google Scholar
[3] Yamane, H., Shimada, M., Sekiguchi, T., DiSalvo, F.J., J. Cryst. Growth 186 (1998) 8 Google Scholar
[4] Kawamura, F., Morishita, M., Omae, K., Yoshimura, M., Mori, Y., and Sasaki, T., Jpn. J. Appl. Phys. 42 (2003) L879 Google Scholar
[5] Dwilinski, R., Doradzinski, R., Garczynski, J., Sierzputowski, L., Palczewska, M., Wysmolek, A., and Kaminska, M., MRS Internet J. of Nitride Semicond. Res. 3 (1998) 25 Google Scholar
[6] Ketchum, D.R. and Kolis, J.W., J. Cryst. Growth, 222 (2001) 431 Google Scholar
[7] Purdy, A.P., Jouet, R. J., and George, C.F., Cryst. Growth and Design 2 (2002) 141 Google Scholar
[8] Yoshikawa, A., Ohshima, E., Fukuda, T., Tsuji, H., Ohshima, K., J. Cryst. Growth 260 (2004) 67 Google Scholar
[9] Hashimoto, T., Fujito, K., Haskell, B. A., Fini, P. T., Speck, J. S., and Nakamura, S., to be published in J. Cryst. GrowthGoogle Scholar
[10] Haskell, B.A., Wu, F., Craven, M.D., Matsuda, S., Fini, P.T., Fujii, T., Fujito, K., DenBaars, S.P., Speck, J.S., and Nakamura, S., Appl. Phys. Lett. 83 (2003) 644 Google Scholar
[11] Byrappa, K. and Yoshimura, M., Handbook of Hydrothermal Technology, Chapter 4, (Noyes Publications, 2001)Google Scholar
[12] Dwilinski, R.T. et.al., United States Patent No. 6, 656,615 B2 (2003)Google Scholar
[13] Hoffmann, A., Christen, J., Siegle, H., Bertram, F., Schmidt, D., Eckey, L., Thomsen, C., and Hiramatsu, K., Mat. Sci. Eng. B50 (1997) 192 Google Scholar