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Amorphous Silicon Alloy Punch-Through Diodes for Display Applications

Published online by Cambridge University Press:  26 February 2011

W. den Boer ,
S. Guha ,
A. Kawasaki  and
Z. Yaniv
W. den Boer
Affiliation:
Energy Conversion Devices, Inc., 1675 W. Maple Rd, Troy, MI 48084
S. Guha
Affiliation:
Energy Conversion Devices, Inc., 1675 W. Maple Rd, Troy, MI 48084
A. Kawasaki
Affiliation:
Work performed at Energy Conversion Devices, Nippon Steel Corporation, Japan
Z. Yaniv
Affiliation:
Ovonic Imaging Systems, Inc., 1937 Barrett St., Troy, MI 48084
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Abstract

The current-voltage characteristics of amorphous silicon alloy n-π-n and p-i-p diodes have been investigated. These diodes show highly nonlinear conduction characteristics which are attributed to the punch-through effect. The dependence of the non-linearity on the thickness and doping of the intermediate active layer support this interpretation. An experimental 108 × 108 pixel liquid crystal display was built with punch-through diodes as pixel switches.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 615
Copyright
Copyright © Materials Research Society 1987

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References

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