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Amorphous Silicon Photodiode-Thin Film Transistor Image Sensor with Diode on Top Structure

Published online by Cambridge University Press:  15 February 2011

M J Powell ,
C Glasse ,
I D French ,
A R Franklin ,
J R Hughes  and
J E Curran
M J Powell
Affiliation:
Philips Research Laboratories, Redhill, Surrey. RH1 5HA, UK.
C Glasse
Affiliation:
Philips Research Laboratories, Redhill, Surrey. RH1 5HA, UK.
I D French
Affiliation:
Philips Research Laboratories, Redhill, Surrey. RH1 5HA, UK.
A R Franklin
Affiliation:
Philips Research Laboratories, Redhill, Surrey. RH1 5HA, UK.
J R Hughes
Affiliation:
Philips Research Laboratories, Redhill, Surrey. RH1 5HA, UK.
J E Curran
Affiliation:
Philips Research Laboratories, Redhill, Surrey. RH1 5HA, UK.
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Abstract

We have developed a new amorphous silicon image sensor technology using a matrix array of amorphous silicon thin film transistors and photodiodes, where the amorphous silicon nip photodiode is fabricated on top of a thick insulating layer, on top of the thin film transistor array. We call this ‘diode on top’ technology or DOTTY. The active diode area can be as high as 93%, compared to 50% for our conventional photodiode-TFT technology. This leads to a higher signal to noise performance, which is important for medical X-ray applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 863
Copyright
Copyright © Materials Research Society 1997

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References

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