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An Analysis of Conventional and Self-Aligned four Terminal Resistor Structures for The Determination of The Contact Resistivity from End Resistance Measurements

Published online by Cambridge University Press:  28 February 2011

I. Suni ,
M. Finetti  and
K. Grahn
I. Suni
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland, Otakaari 7B, 02150 SF, Espoo, Finland
M. Finetti
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland, Otakaari 7B, 02150 SF, Espoo, Finland
K. Grahn
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland, Otakaari 7B, 02150 SF, Espoo, Finland
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Abstract

A computer model based on the finite element method has been applied to evaluate the effect of the parasitic area between contact and diffusion edges on end resistance measurements in four terminal Kelvin resistor structures. The model is then applied to Al/Ti/n+ Si contacts and a value of contact resistivity of Qc = 1.8×10−7.Ωcm2 is derived. For comparison, the use of a self-aligned structure to avoid parasitic effects is presented and the first experimental results obtained on Al/Ti/n+Si and Al/CoSi2/n+Si contacts are shown and discussed.

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