Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-18T16:47:14.726Z Has data issue: false hasContentIssue false
  • English
  • Français

An Analysis of Conventional and Self-Aligned four Terminal Resistor Structures for The Determination of The Contact Resistivity from End Resistance Measurements

Published online by Cambridge University Press:  28 February 2011

I. Suni ,
M. Finetti  and
K. Grahn
I. Suni
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland, Otakaari 7B, 02150 SF, Espoo, Finland
M. Finetti
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland, Otakaari 7B, 02150 SF, Espoo, Finland
K. Grahn
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland, Otakaari 7B, 02150 SF, Espoo, Finland
Get access

Abstract

A computer model based on the finite element method has been applied to evaluate the effect of the parasitic area between contact and diffusion edges on end resistance measurements in four terminal Kelvin resistor structures. The model is then applied to Al/Ti/n+ Si contacts and a value of contact resistivity of Qc = 1.8×10−7.Ωcm2 is derived. For comparison, the use of a self-aligned structure to avoid parasitic effects is presented and the first experimental results obtained on Al/Ti/n+Si and Al/CoSi2/n+Si contacts are shown and discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 363
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Proctor, S.J. and Linholm, L.W., IEEE Letters, Edl–3, 294 (1982).Google Scholar
2. Cohen, G.C., Gildenblat, G., Ghezzo, M. and Brown, D.M., J.Electrochem.Soc., 129, 1335 (1982).Google Scholar
3. Proctor, S., Linholm, L.W. and Mazer, J.A., IEEE Trans. on Electron Devices, ED–30, 1535 (1983).Google Scholar
4. Finetti, M., Scorzoni, A. and Soncini, G., IEEE Letters, EDL–5, 524 (1984).Google Scholar
5. Finetti, M., Guerri, S., Negrini, P., Scorzoni, A. and Suni, I., Thin Solid Films, 130, 137 (1985).Google Scholar
6. Loh, W.H., Saraswat, K. and Dutton, R.W., IEEE Letters, EDL–6, 105 (1985).Google Scholar
7. Swirhun, S.E., Loh, W.M., Swanson, R.M. and Saraswat, K.C., IEEE Letters, EDL–6, 639 (1985).Google Scholar
8. Berger, H.H., Solid State Electron., 15, 145 (1972).Google Scholar
9. Scott, D.B., Hunter, W. and Shichjio, H., IEEE Trans. on Electron Devices, ED–29, 651 (1982).Google Scholar
10. Suni, I., Grahn, K. and Finetti, M., (to be published)Google Scholar