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An Atomic-Scale Derived Continuous Approach for the Anisotropic Etching

Published online by Cambridge University Press:  10 February 2011

N. Moldovan ,
S. Nedelcu  and
H. C. Amon
N. Moldovan
Affiliation:
IMT Bucharest, Sir. Erou lancu Nicolae 32 B, 72996, Romania, nmoldovan@jnrt.ro
S. Nedelcu
Affiliation:
IMT Bucharest, Sir. Erou lancu Nicolae 32 B, 72996, Romania, nmoldovan@jnrt.ro
H. C. Amon
Affiliation:
LAAS/CNRS, 7 Av. Colonel Roche 31007, Toulouse ex, France, camon@laas.fr
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Abstract

Starting from the Ising model for the bond-breaking algorithm associated to the problem of anisotropie etching of crystals, a method is used to write the discrete master equation for etching normally to indefinite large planes. This equation links the values of the absence probabilities for bonds placed in neighbouring lattice planes and can be transformed to describe a continuous spatial field of probabilities. The method allows the calculation of the etching rate angular diagrams. Examples are shown for several orientations and sets of parameters governing the bond-breaking scheme at atomic level. Comparisons with experimental results are provided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 213
Copyright
Copyright © Materials Research Society 1998

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References

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