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An Effective In-Situ O2 High Density Plasma Clean

Published online by Cambridge University Press:  21 February 2011

K. Reinhardt ,
B. Divincenzo ,
C.-L. Yang ,
P. Arleo ,
J. Marks ,
P. Mikulan ,
T. Gu  and
S. Fonash
K. Reinhardt
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741, On assignment from Advanced Micro Devices
B. Divincenzo
Affiliation:
Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054
C.-L. Yang
Affiliation:
Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054
P. Arleo
Affiliation:
Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054
J. Marks
Affiliation:
Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054
P. Mikulan
Affiliation:
Electronic Materials and Processing Research Processing Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16082
T. Gu
Affiliation:
Electronic Materials and Processing Research Processing Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16082
S. Fonash
Affiliation:
Electronic Materials and Processing Research Processing Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16082
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Abstract

An oxygen treatment in a high density plasma system is used to effectively remove the fluorocarbon polymer that deposits on the silicon substrate surface after an oxide etch process. Schottky current-voltage analysis, spectroscopic ellipsometry, and X-ray photoelectron spectroscopy, are used to investigate the effectiveness of the in-situ O2 clean process. Polymeric material deposited in the high density plasma system is shown to be completely removed with no polymeric residue remaining on the wafer surface after cleaning. Deep contacts, greater than 2 um, are shown to have the polymer effectively removed with the in-situ O2 clean process. Minimal oxide growth during the plasma clean is observed. Also, there is no etching of the silicon substrate with the O2 clean process. A comparison is made to an ozone clean process that is known to effectively clean organic contaminants from silicon surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 273
Copyright
Copyright © Materials Research Society 1993

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References

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