An optimized process of Pb(Zr,Ti)O3(PZT) ferroelectric capacitor has been investigated in order to develop a highly scaleable 1T/1C ferroelectric random access memory. The PZT ferroelectric capacitor, Pt/PZT/Pt stack, was formed on the TiO2/SiO2/Si substrate. The PZT thin films were prepared by conventional sol-gel multi-coating method. Physical and electrical properties of the PZT ferroelectric capacitors were characterized by XRD, SEM, TEM and RT6000S, respectively.

It was revealed that the microstructure of PZT thin film is strongly influenced by sol-gel coating process, especially depending on coating methods of the first PZT layer. The second phase was observed in the PZT thin films, which is found to be pyrochlore phase. The size and density of pyrochlore phase were significantly reduced by modifying the coating methods of first PZT layer. Microstructure of PZT thin film capacitors was evaluated in detail along with electrical properties such as remnant polarization, coercive electric field, and dielectric leakage. The sensing Pr window was also introduced for proper sensing margin in IT/1C ferroelectric random access memory. This concept is well verified by 64Kb 1T/1C ferroelectric random access memory.