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Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs)

Published online by Cambridge University Press:  01 February 2011

Ilan Ben-Yaacov ,
Yee-Kwang Seck ,
Steven P. DenBaars ,
Evelyn L. Hu  and
Umesh K. Mishra
Ilan Ben-Yaacov
Affiliation:
ECE Department, University of California Santa Barbara, CA 93106-9560, U.S.A.
Yee-Kwang Seck
Affiliation:
ECE Department, University of California Santa Barbara, CA 93106-9560, U.S.A.
Steven P. DenBaars
Affiliation:
ECE Department, University of California Santa Barbara, CA 93106-9560, U.S.A.
Evelyn L. Hu
Affiliation:
ECE Department, University of California Santa Barbara, CA 93106-9560, U.S.A.
Umesh K. Mishra
Affiliation:
ECE Department, University of California Santa Barbara, CA 93106-9560, U.S.A.
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Abstract

A complete analysis of leakage currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) with regrown aperture and source regions was carried out. The total observed leakage current was found to be a combination of both gate leakage and source leakage. Two paths for source leakage have been identified; electrons passing directly through the insulating layer to the drain region as well as electrons traveling through the aperture but underneath the 2DEG at the AlGaN/GaN interface. Source leakage through the insulating layer resulted from pits formed at the onset of regrowth, as the sample was heated to growth temperature, and was successfully eliminated by optimizing regrowth conditions. Source leakage underneath the 2DEG occurred when the unintentionally doped (UID) GaN layer above the insulating layer was not fully depleted and could be eliminated by reducing the thickness of the UID GaN layer. Gate leakage has been attributed to the enhanced incorporation of n-type impurities inside as well as above the aperture region during regrowth, resulting in a narrowing ofthegateSchottkybarrier.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C4.8
Copyright
Copyright © Materials Research Society 2003

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References

[1] Wu, Y.-F., Kapolnek, D., Ibbetson, J., Zhang, N.-Q., Parikh, P., Keller, B. P., and Mishra, U. K., “High Al-content AlGaN/GaN HEMT's on SiC substrates with very high power performance,” IEDM Tech Dig., Dec. 1999, Tno. 99CH36318, pp. 925–927.Google Scholar
[2] Eastman, L. F., Shealy, J. R., Tilak, V., Smart, J., Green, B. and Prunty, T., “AlGaN/GaN HEMT Microwave CW Power Limits,” presented at the Fourth International Conference on Nitride Semiconductors, Denver, Colorado, 2001.Google Scholar
[3] Limb, J. B., Xing, H., Moran, B., McCarthy, L., DenBaars, S. P., and Mishra, U. K., “High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage,” Appl. Phys. Lett., vol. 76, pp. 2457–2459, Apr. 2000.80+V)+of+GaN+bipolar+junction+transistors+with+low+leakage,”+Appl.+Phys.+Lett.,+vol.+76,+pp.+2457–2459,+Apr.+2000.>Google Scholar
[4] Ambacher, O., “Growth and applications of group III-nitrides,” J. Phys. D, vol. 31, pp. 2653–2710, 1998.Google Scholar
[5] Frensley, W. R., “Power-limiting breakdown effects in GaAs MESFETs,” IEEE Trans. Electron Devices, vol. 28, pp. 962–970, Aug. 1981.Google Scholar
[6] Zhang, N.-Q., Moran, B., DenBaars, S. P., Mishra, U. K., Wang, X.W., and Ma, T.P., “Kilovolt AlGaN/GaN HEMTs as switching devices,” phys. stat. sol. (a), vol. 188, no. 1, Nov. 2001.Google Scholar
[7] Ben-Yaacov, I., Seck, Y.-K., DenBaars, S. P., Hu, E. L., and Mishra, U. K., to be published.Google Scholar
[8] Nitta, S., Kariya, M., Kashima, T., Yamaguchi, S., Amano, H., and Akasaki, I., “Mass transport and the reduction of threading dislocation in GaN,” Appl. Surf. Sci., vol. 159, pp. 421–426, June 2000.Google Scholar
[9] Heikman, S., Keller, S., Baars, S. P. Den, Mishra, U. K., Bertram, F., and Christen, J., submitted to Jpn. J. Appl. Phys.Google Scholar
[10] Heikman, S., Keller, S., DenBaars, S. P., and Mishra, U. K., submitted to phys. stat. sol.(a). Google Scholar