Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-01T19:10:03.533Z Has data issue: false hasContentIssue false
  • English
  • Français

Annealing Characteristics of Amorphous Silicon Alloy Solar Cells Irradiated with 1.00 MeV Protons*

Published online by Cambridge University Press:  21 February 2011

Salman S. Abdulaziz  and
James R. Woodyard
Salman S. Abdulaziz
Affiliation:
Institute for Manufacturing Research and Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
James R. Woodyard
Affiliation:
Institute for Manufacturing Research and Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
Get access

Abstract

a-Si:H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.2 5E15 cm-2. Annealing of the short-circuit current density was studied at 0, 22, 50, 100 and 150 °C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at O °C and the initial characteristics of the cells are restored by annealing at 200 °C. It is proposed that the degradation in the short-circuit current density with irradiation is due to carrier recombination through the fraction of D° states bounded by the guasi-Fermi energies. The time dependence of the rate of annealing in the short-circuit current density appears to be consistent with the interpretation that there is dispersive transport mechanism which leads to the annealing of the irradiation induced defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 463
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

This work was supoorted under NASA contract NAG 3–833 and the wayne state university Institute for manufacturing Research.

References

REFERENCES

1. Payson, J. S., Abdulaziz, S., Li, Y., and woodyard, J. R., Space Photovoltaic Research and Technology Conference, 1989, NASA Conference Publication 3107, 389 (1991)Google Scholar
2. Scott Payson, J., Abdulaziz, Salman, Li, Yang, and Woodyard, James. R. in Amorphous Silicon Technology-1990. edited by Taylor, P.C., Thompson, M.J., LeComber, P.G., Hamakawa, Y. and Madan, A. (Mater. Res. Soc. Symp. Proc. 192, Pittsburgh, PA, 1990) pp. 63–68.Google Scholar
3. Abdulaziz, Salman, Scott Payson, J., Li, Yang and Woodyard, James. R., Proc. of the 21st IEEE Photovoltaic Specialists Conference, 1510 (1990).Google Scholar
4. Hanak, Joseph J., Myatt, Art, Nath, Prem, and Woodyard, James R., Proc. of the 18th IEEE Photovoltaic Specialists Conference, 1718 (1985).Google Scholar
5. Woodyard, James R. and Hanak, J. J. in Amorphous Silicon Semiconductors-Pure and Hydrogenated. edited by Madan, A., Thompson, M., Adler, D. and Hamakawa, Y. (Mater. Res. Soc. Symp. Proc. 95, Pittsburgh, PA, 1987) pp. 533–538.Google Scholar
6. Scott Payson, J., Li, Yang and Woodyard, J. R. in Amorphous Silicon Technology-1989. edited by Madan, A., Thompson, M., Taylor, P.C., Hamakawa, Y. and LeComber, P.G., Hamakawa, Y. and Madan, A. (Mater. Res. Soc. Symp. Proc. 149, Pittsburgh, PA, 1987) pp. 321–326.Google Scholar
7. Schumm, G. and Bauer, G. H. in Amorphous Silicon Technology-1990. edited by Taylor, P.C., Thompson, M.J., LeComber, P.G., Hamakawa, Y. and Madan, A. (Mater. Res. Soc. Symp. Proc. 192, Pittsburgh, PA, 1990) pp. 189–194.Google Scholar
8. Hack, M. and Shur, M., J. Appl. Phys 58 997 (1985).Google Scholar
9. Taylor, G. W. and Simmons, J. G., J. Non-Cry. Sol. 8–10, 940 (1972).Google Scholar
10. Kakalios, James and Jackson, Warren B. in Amorphous Silicon and Related Materials edited by Fritzsche, Hellmut (World Scientific Publishing Company, 1988) p. 207.Google Scholar