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Application of Analytical Electron Microscopy to Ion Implantation and Near Surface Microstructures

Published online by Cambridge University Press:  25 February 2011

P. S. Sklad
P. S. Sklad*
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Surface modification using ion beam techniques is recognized as an important method for improving surface controlled properties of metallic, ceramic, and semiconductor materials. Determination of the microstructure and composition in regions located within a few hundred nanometers of the surface is essential to gaining an understanding of the mechanisms responsible for the improved properties. Analytical electron microscopy (AEM), high resolution microscopy, and microdiffraction are ideally suited for this purpose. These techniques are powerful tools for characterizing microstructure in terms of solute concentration profiles, second phase formation, lattice damage, crystallinity of the implanted layer and annealing behavior. Such analyses allow correlations with theoretical models, property measurements and results of complementary techniques. The proximity of the regions of interest to the surface also places stringent requirements on specimen preparation techniques. The power of AEM in examining the effects of ion implantation will be illustrated by reviewing the results of several investigations. A brief discussion of some important aspects of specimen preparation will also be included.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 62: Symposium Q – Materials Problem Solving with the Transmission Electron Microscope , 1985 , 73
Copyright
Copyright © Materials Research Society 1986

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References

1. Bentley, J., Stephenson, L. D., Benson, R. B. Jr., Parrish, P. A., and Hirvonen, J. K., in Ion Implantation as Ion Beam Processing of Materials (MRS Symp. Proc. Vol.27), edited by Hubler, G. K., et al. (North Holland, New York, 1984) p. 151.Google Scholar
2. International Tables for X-ray Crystallography, Volume 1 (Kynoch Press, Birmingham, 1969) p. 38–39.Google Scholar
3. Farrell, K., Packan, N. H., and Houston, J. T., Rad. Effects, 62, 39—51 (1982).Google Scholar
4. Pennycook, S. J., Narayan, J., and Holland, O. W., Appl. Phys. Lett. 44, 547 (1984).CrossRefGoogle Scholar
5. Pennycook, S. J. and Narayan, J., Appl. Phys. Lett. 45 385 (1984).Google Scholar
6. Sklad, P. S., Angelini, P., McHargue, C. J., and Williams, J. M., Proceedings of the 42nd Annual Meeting of the Electron Microscopy Society of America, 1984, edited by Bailey, G. W. (San Francisco Press) p. 416.Google Scholar
7. Bentley, J. and Angelini, P., Proceedings of the 42nd Annual Meeting of the Electron Microscopy Society of America, 1984, edited by Bailey, G. W. (San Francisco Press) p. 578.Google Scholar
8. Farlow, G. C., White, C. W., McHargue, C. J., Sklad, P. S., and Appleton, B. R., Nucl. Instr. and Meth. B7/8, 541–546 (1985).CrossRefGoogle Scholar