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Application of Novel Epitaxy Techniques to the Growth of CrSi2

Published online by Cambridge University Press:  03 September 2012

R.W. Fathauer
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
T. George
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
E.W. Jones
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
W.T. Pike
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
K.T. Short
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave, Murray Hill, NJ 07974
R.P. Vasquez
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
Alice E. White
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave, Murray Hill, NJ 07974
B.J. Wilkens
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287
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Abstract

CrSi2 is of technological interest because it is a silicon-based semiconductor with a small band gap. Due to the lack of success with conventional molecular beam epitaxy of CrSi2 on Si, growth on mesotaxy-produced template layers and allotaxy have been attempted. After removal of the Si capping layer, epitaxy of additional CrSi2 on template layers formed by mesotaxy was found to be possible. However, single-crystal continuous films were not obtained, due at least in part to the presence of a network of cracks in the starting template. Allotaxy of CrSi2 was found to allow the formation of large grains of CrSi2 embedded in a single-crystal Si matrix, but coalescence of these grains into a continuous layer was not achieved.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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