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Application of ultraviolet radiation to minimize interfacial layer formation during the growth of alternate high-k gate dielectrics on Si

Published online by Cambridge University Press:  21 March 2011

V. Craciun ,
N. D. Bassim ,
J. M. Howard ,
J. Spear ,
S. Bates  and
R. K. Singh
V. Craciun
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
N. D. Bassim
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J. M. Howard
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J. Spear
Affiliation:
Philips Analytical, Tempe AZ 85266, USA
S. Bates
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
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Abstract

Yttrium oxide and barium strontium titanate (BST) thin films were grown directly on Si substrates by the pulsed laser deposition (PLD) technique. Because the optimum oxygen pressure during PLD process is of the order of 10 mTorr, some of the oxygen atoms are trapped inside the grown films and contribute to the growth of a silicon oxide interfacial layer. The use of an UV source during the growth resulted in the reduction of the optimum oxygen pressure and, as a consequence, the amount of trapped oxygen and thickness of the interfacial layer. In addition to that, UV radiation influenced the film morphologies and electrical properties. A further reduction of the interfacial layer was obtained on substrates that were exposed prior to deposition to NH3 for short periods of time under UV radiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F8.11
Copyright
Copyright © Materials Research Society 2001

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References

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