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Arf Excimer Laser and Xe2· Excimer Lamp Induced Photochemical Fluorination of Polyimide Film

Published online by Cambridge University Press:  10 February 2011

T. Ikegame  and
M. Murahara
T. Ikegame
Affiliation:
Department of Electrical Engineering Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
M. Murahara
Affiliation:
Department of Electrical Engineering Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
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Abstract

Only one weak point of all aromatic group polyimide surface was changed to water repellency. Polyimide surface was photo-chemically modified to be fluorinate with ArF excimer laser and Xe2 · excimer lamp irradiation. To promote the photo- chemical reaction, Xe2· excimer lamp was employed to produce CFn. radical from CF4 gas. Simultaneously, ArF excimer laser was irradiated on the polyimide surface to dissociate C-H bond. Dangling bond of C was reacted with CF, radical and produced C-CF, on the polyimide surface. By this modification, polyimide surface was changed to water repellency. As a result, polyimide surface was photo-chemically modified to fluorinate with CF4 gas pressure of 100Torr, the Xe2 excimer lamp of 7mW/cm2, and the ArF excimer laser of 30mJ/cm2, 10Hz and 3000shots, the contact angle with water was 134 degrees. And chemical composition of the photo-modified polyimide surface was inspected by ATR-FTIR spectra measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 544: Symposium Y – Plasma Deposition and Treatment of Polymers , 1998 , 227
Copyright
Copyright © Materials Research Society 1999

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