Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-20T06:36:59.369Z Has data issue: false hasContentIssue false
  • English
  • Français

The As-Grown Microtopologies of Solution Grown GaAs (001) Vicinal Surfaces

Published online by Cambridge University Press:  15 February 2011

T. Marek ,
H.P. Strunk ,
E. Bauser  and
Y.C. Lu
T. Marek
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften, Lehrstuhl VII, Cauerstr. 6, 91058 Erlangen, Germany
H.P. Strunk
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften, Lehrstuhl VII, Cauerstr. 6, 91058 Erlangen, Germany
E. Bauser
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany.
Y.C. Lu
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany.
Get access

Abstract

The observations of the as-solution-grown GaAs (001) vicinal surfaces yield three kinds of Microtopologies. Each of them develops in a certain range of growth temperature. In a low temperature range (492° C…600° C) we observe parallel growth steps with heights of one Monolayer. In a medium range, a network consisting of two sets of growth steps with larger heights is observed. At high growth temperatures (780° C…850° C) we find growth surfaces that are atomically rough. IMplications of these findings for modelling the crystal growth will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 615
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Bauser, E. and Strunk, H.P., J. Cryst. Growth 69, 561 (1984).Google Scholar
[2] Marek, T., Strunk, H.P., Bauser, E. Lu, Y.C., in Inst. Conf. Ser. No 134: edited by Cullis, A.G. and Hutchison, J.L. (Proceedings of the Royal Microscopical Society Conference held at Oxford University, 5.-8. April, 1993), p. 349–352.Google Scholar
[3] Benz, K.W. and Bauser, E., in ‘Crystals’. Vol. 3: ‘III-V Semiconductors’. edited by Freyhardt, H.C., (Springer, Heidelberg, 1980) pp. 21–48.Google Scholar
[4] Yagi, K., Surf. Sci. Reports, 17, No. 6, 308 (1993).Google Scholar
[5] Chernov, A.A., Soviet Physics Uspekhy, 4, No. 1, 116 (1961).Google Scholar
[6] Chernov, A.A. and Nishinaga, T., in Morphology of Crystals Part A. edited by Sunagawa, I. (Terra Scientific Publishing Company, Tokyo, 1987), p. 211.Google Scholar
[7] Marek, T., Strunk, H.P., Weishart, H., Bauser, E., J. Cryst. Growth 134, 14 (1993).Google Scholar
[8] Gilmer, G.H., Ghez, R., Cabrera, N., J. Cryst. Growth, 8, 79 (1971).Google Scholar
[9] Ghez, R. and Gilmer, G.H., J. Cryst. Growth, 21, 93 (1974).Google Scholar
[10] Morlock, U. and Queisser, H.J., Phil. Mag. A, 64, No. 1, 165 (1991).Google Scholar
[11] Müser, H.E. and Rys, F.S., Condens. Mat., 76, 107 (1989).Google Scholar
[12] Conrad, E.H., Progress in Surface Sience, 39, 65 (1992).Google Scholar
[13] Bernasconi, M. and Tosarti, E., Surf. Sci. Reports, 17, Nos. 7/8, 363 (1993).Google Scholar