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As‐Grown Superconductivity of Bi‐System Thin Films Prepared by Magnetron Sputtering with Three Pb Doped Targets: (Bi 1.6 Pb0.4) 1 + a (SrCa)2 Cu3 O x, (Bi 1.6 Pb0.4) 1 (SrCa)2+c Cu3 Ox and (Bi 1.6 Pb0.4) 1 (SrCa)2Cu3+cOx (a = 0.5, b= 1,c= 1.5)

Published online by Cambridge University Press:  28 February 2011

Ken'ichi Kuroda ,
Masami Tanioku ,
Kazuyoshi Kojima  and
Koichi Hamanaka
Ken'ichi Kuroda
Affiliation:
Central Research Laboratory, Mitsubishi Electric Corporation Tsukaguchi, Amagasaki, Hyogo 661, JAPAN
Masami Tanioku
Affiliation:
Central Research Laboratory, Mitsubishi Electric Corporation Tsukaguchi, Amagasaki, Hyogo 661, JAPAN
Kazuyoshi Kojima
Affiliation:
Central Research Laboratory, Mitsubishi Electric Corporation Tsukaguchi, Amagasaki, Hyogo 661, JAPAN
Koichi Hamanaka
Affiliation:
Central Research Laboratory, Mitsubishi Electric Corporation Tsukaguchi, Amagasaki, Hyogo 661, JAPAN
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Abstract

Superconducting Bi system thin films have been formed on MgO(100) substrates by RF magnetron sputtering from three Pb‐doped targets: Bi2.4 Pb0.6 Sr2 Ca2 CU3 O x ,Bi 1.6 Pb0.4 Sr3 Ca3 CU3 O x and Bi 1.6 Pb 0.4 Sr2 Ca2 CU4.5 O x. The as‐grown films formed at substrate temperatures above 600 °C showed superconductivity, though, they did not contain Pb.The film, formed at 660°C and kept at the same substrate temperature and gas pressure as the sputtering conditions for 5 h after deposition, showed a resistivity drop at 115 K and zero resistivity at 83 K. The Jc value of the film was 4x105 A/cm2 at 77 K and 3x107 A/cm 2 at 20 K.

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