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a-SiC:H Based Devices as Optical Demultiplexers

Published online by Cambridge University Press:  01 February 2011

Paula Louro ,
Manuela Vieira ,
João Costa ,
M. A. Vieira ,
Miguel Fernandes ,
Alessandro Fantoni  and
Manuel Barata
Paula Louro
Affiliation:
plouro@deetc.isel.ipl.pt, ISEL, DEETC, Lisbon, Portugal
Manuela Vieira
Affiliation:
mv@isel.ipl.pt, ISEL, DEETC, Lisbon, Portugal
João Costa
Affiliation:
jcosta@deetc.isel.ipl.pt, ISEL, DEETC, Lisbon, Portugal
M. A. Vieira
Affiliation:
mvieira@deetc.isel.ipl.pt, UNINOVA, DEETC, CAPARICA, Portugal
Miguel Fernandes
Affiliation:
mfernandes@deetc.isel.ipl.pt, ISEL, Rua Conselheiro Emídio Navarro, 1, Lisbon, 1959-007, Portugal
Alessandro Fantoni
Affiliation:
afantoni@deetc.isel.ipl.pt, ISEL, Rua Conselheiro Emídio Navarro, 1, Lisbon, 1959-007, Portugal
Manuel Barata
Affiliation:
mmb@isel.ipl.pt, ISEL, Rua Conselheiro Emídio Navarro, 1, Lisbon, 1959-007, Portugal
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Abstract

In this paper we present results on the use of a multilayered a-SiC:H heterostructure as a wavelength-division demultiplexing device (WDM) for the visible light spectrum. The WDM device is a glass/ITO/a-SiC:H (p-i-n)/ a-SiC:H(-p) /Si:H(-i)/SiC:H (-n)/ITO heterostructure in which the generated photocurrent at different values of the applied bias can be assigned to the different optical signals.

The device was characterized through spectral response measurements, under different electrical bias. Demonstration of the device functionality for WDM applications was done with three different input channels covering wavelengths within the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. The influence of the optical power density was also analysed.

An electrical model, supported by a numerical simulation explains the device operation. Short range optical communications constitute the major application field, however other applications are also foreseen.

Keywords

optoelectronicsemiconductingdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B07-07
Copyright
Copyright © Materials Research Society 2010

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References

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