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Atomic Force Microscopy Characterization of Interface Roughness of V-Shaped AlGaAs/GaAs Quantum Wire

Published online by Cambridge University Press:  10 February 2011

Xue-Lun Wang ,
Valia Voliotis ,
Roger Grousson  and
Mutsuo Ogura
Xue-Lun Wang
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan, and CREST, Japan Science and Technology Corporation, 4-1-8 Honcho, Kawaguchi 332-0012, Japan
Valia Voliotis
Affiliation:
Groupe de Physique des Solides, CNRS, Universités Paris 6 et Paris 7, 2 place Jussieu, F-75251 Paris Cedex 05, France Université d'Evry-Val d'Essonne, Boulevard F.Mitterand, 91025 Evry, France
Roger Grousson
Affiliation:
Groupe de Physique des Solides, CNRS, Universités Paris 6 et Paris 7, 2 place Jussieu, F-75251 Paris Cedex 05, France
Mutsuo Ogura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan, and CREST, Japan Science and Technology Corporation, 4-1-8 Honcho, Kawaguchi 332-0012, Japan
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Abstract

The influence of surface roughness on the initial V-grooved substrate on the interface uniformity of V-shaped AIGaAs/GaAs quantum wires (QWRs) is investigated by direct atomic force microscopy observation of V-groove surface. We found that roughness on the initial V-grooved substrate induced during V-groove preparation processes can severely affect the interface uniformity of QWRs grown on it. We also found that roughness on the initial substrate can be greatly reduced by a simple etching treatment using a NH4OH:H2O2:H2O=1:3:50 solution, and this resulted in significant improvement of QWR interface quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 47
Copyright
Copyright © Materials Research Society 2000

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References

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