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Atomic-Scale Dynamic Deformation Behavior of BN Thin Films

Published online by Cambridge University Press:  11 February 2011

Chihiro Iwamoto ,
Hangsheng Yang  and
Toyonobu Yoshida
Chihiro Iwamoto
Affiliation:
Engineering Research Institute, School of Engineering, The University of Tokyo, Yayoi 2–11–16, Bunkyo-ku, Tokyo 113–8656, Japan
Hangsheng Yang
Affiliation:
Department of Materials Engineering, School of Engineering, The University of Tokyo, Hongo 7–3–1, Bunkyo-ku, Tokyo 113–8656, Japan
Toyonobu Yoshida
Affiliation:
Department of Materials Engineering, School of Engineering, The University of Tokyo, Hongo 7–3–1, Bunkyo-ku, Tokyo 113–8656, Japan
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Abstract

Deformation behavior of the BN film was dynamically observed by high-resolution transmission electron microscopy. BN thin films were deposited on a narrow edge of Si flakes, using inductively coupled plasma-enhanced chemical vapor deposition. High-resolution observation of the sample revealed that the BN film was possibly deposited on the edge of the Si thinned to less than 10 nm in thickness, whose morphology varied depending on the thickness of the Si edge. Intriguing mechanical properties of the BN films, especially relating their dynamic behavior, were clearly verified by the high-resolution observation with piezo-ceramic tube for three-axis positioning of an indenter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 750: Symposium Y – Surface Engineering 2002–Synthesis, Characterization and Applications , 2002 , Y5.21
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Kester, D. J., Ailey, K. S., Davis, R. F. and More, K. L., J. Mater. Res. 8, 1213 (1993).Google Scholar
2. Medlin, D. L., Friedmann, T. A., Mirkarimi, P. B., Rez, P., Mills, M. J. and McCarty, K. F. J., Appl. Phys. 76, 295 (1994).Google Scholar
3. Luethje, H., Bewilogua, K., Daaud, S., Johansson, M. and Hultman, L., Thin Solid Films 257, 40 (1995).Google Scholar
4. Watanabe, S., Miyake, S., Zhou, W., Ikuhara, Y., Suzuki, T. and Murakawa, M., Appl. Phys. Lett. 66, 1478 (1995).Google Scholar
5. Hofsaess, H., Ronning, C., Griesmeier, U., Gross, M., Reinke, S., Kuhr, M., Zweck, J. and Fischer, R., Nucl. Instrum. Methods Phys. Res. B 106, 153 (1995).Google Scholar
6. Yamada-Takamura, Y., Tsuda, O., Ichinose, H., and Yoshida, T., Phys. Rev. B 59, 10351 (1999).Google Scholar
7. Shtansky, D. V., Tsuda, O., Ikuhara, Y. and Yoshida, T., Acta. Mater. 48, 3745 (2000).Google Scholar
8. McCarty, K. F. and Medlin, D. L., Diamond Relat. Mater. 6, 1219 (1997).Google Scholar
9. Yoshida, T., Diamond Relat. Mater. 5, 501 (1996).Google Scholar
10. Yoshida, T., Diamond Films Techinol. 7, 87 (1997).Google Scholar
11. Mirkarimi, P. B., McCarty, K. F. and Medlin, D. L., Mater. Sci. Eng. R21, 47 (1997).Google Scholar
12. Iwamoto, C., Yang, H. S. and Yoshida, T., Diamond and Related Material, 11, 1854 (2002).Google Scholar
13. Yang, H. S., Iwamoto, C. and Yoshida, T., J. Appl. Phys. 91, 6695 (2002).Google Scholar
14. Yang, H. S., Iwamoto, C. and Yoshida, T., Thin Solid Films 407, 67 (2002).Google Scholar
15. Yamada, Y., Tatebayashi, Y., Tsuda, O. and Yoshida, T., Thin Solid Films 295, 137 (1997).Google Scholar