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The AuZn/GaAs Heterojunction: Evidence of Varying Solid State Reactions

Published online by Cambridge University Press:  25 February 2011

George J. Vendura ,
Russell Messier ,
Karl Spear ,
Carlo Pantano  and
William Drawl
George J. Vendura
Affiliation:
Solar Union Materials and Microelectronics, Box 124, Los Alamitos, CA 90720
Russell Messier
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Karl Spear
Affiliation:
Ceramic Science Deparment, The Pennsylvania State University, University Park, PA 16802
Carlo Pantano
Affiliation:
Ceramic Science Deparment, The Pennsylvania State University, University Park, PA 16802
William Drawl
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Au-Zn is one of several metal systems applied to p-GaAs to form ohmic contacts. Although it exhibits a fair degree of reliability, the thrust toward higher power and adverse environments raises concern. Observations indicate that the electrical and mechanical properties as well as the stability of AuZn/GaAs vary with Zn thickness. In this study devices with thin and thick layers were tested visually, mechanically and using SEM and X-ray diffraction techniques. Results revealed significantly different reactivity and product chemistry that could significantly affect overall device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 169
Copyright
Copyright © Materials Research Society 1989

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