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A Buried Silicon Nanocrystals Based High Gain Coefficient SiO2/SiOX/SiO2 Strip-Loaded Waveguide Amplifier on Quartz Substrate

Published online by Cambridge University Press:  01 February 2011

Cheng-Wei Lian  and
Gong-Ru Lin
Cheng-Wei Lian
Affiliation:
r95941032@ntu.edu.tw, National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
Gong-Ru Lin
Affiliation:
grlin@ntu.edu.tw, National Taiwan University, Graduate Institute of Photonics and Optoelectronics, 1 Roosevelt Rd. Sec. 4,, Taipei, 10617, Taiwan, +886-2-33663700 ext. 235, +886-2-33669598
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Abstract

Si-rich SiOX strip-loaded waveguide with silicon (Si) nanocrystals contributed amplified spontaneous emission at 750-850 nm with associated spectral linewidth of 140 nm is characterized. By using variable stripe length (VSL) method we demonstrate the optical gain and loss coefficients of 65 and 5 cm−1, respectively, for such a waveguide amplifier. The optical gain and loss coefficients are observed by fitting the one dimensional amplifier equation. The small-signal power gain of 18.4 dB at wavelength of 805 nm under He-Cd laser pumping of 40 mW at 325 nm is obtained from the SiO2/SiOX/SiO2 waveguide amplifier with length of 1 cm.

Keywords

Sinanostructurelaser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1076: Symposium K – Materials and Devices for Laser Remote Sensing and Optical Communication , 2008 , 1076-K05-02
Copyright
Copyright © Materials Research Society 2008

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References

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