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Calculation of Glass-Forming Ability in the Ni-Zr and Ni-Ti Systems from Interatomic Potentials

Published online by Cambridge University Press:  17 March 2011

W.S. Lai  and
B.X. Liu
W.S. Lai
Affiliation:
Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
B.X. Liu
Affiliation:
Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
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Abstract

For the Ni-Zr and Ni-Ti systems, Molecular-dynamics (MD) simulations are conducted to compare the relative stability of the terminal solid solutions versus the corresponding amorphous states as a function of solute concentrations. It turns out that the terminal solid solutions transform into an amorphous state spontaneously when the solute concentrations are beyond the maximum allowable values, i.e. the critical solubilities, determined to be 14 at.% Zr in Ni and 25 at.% Ni in Zr for Ni-Zr system and 38 at.% Ti in Ni and 15 at.% Ni in Ti for the Ni-Ti system, respectively. The glass-forming ranges are therefore deduced to be within the respective critical solubilities, i.e. 14-75 at.% Zr and 38-85 at.% Ti for the Ni-Zr and Ni-Ti systems, respectively, which are compatible with those from experiments and/or from the generalized Lindemann criterion. Moreover, MD simulation also reveals that solid-state amorphization does take place and that the growth of the amorphous interlayer follows exactly a t½ law. Besides, a solubility criterion is proposed that the lower the maximum solid solubility the less stable is the lattice of the metal upon solid-state reaction and it can explain the fact that the growing speed of amorphous interlayer toward Ni (melting point = 1528 K) is greater than that directed to the Zr (2128 K) lattice, while it is smaller than that to Ti (1941 K) side.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 644: Symposium L – Supercooled Liquid, Bulk Glassy and Nanocrystalline State of Alloys , 2000 , L4.2
Copyright
Copyright © Materials Research Society 2001

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References

1. Duwez, P., Willens, R. H., and Klement, W., J. Appl. Phys., 31, 1136 (1960).Google Scholar
2. Schwarz, R. B. and Johnson, W. L., Phys. Rev. Lett., 51, 415 (1983).Google Scholar
3. Liu, B. X., Johnson, W. L., Nicolet, M.-A., and Lau, S. S., Appl. Phys. Lett., 42, 45 (1983).Google Scholar
4. Lai, W. S., Liu, B. X., Phys. Rev. B, 58, 6063 (1998).Google Scholar
5. Zhang, Q., Lai, W. S. and Liu, B. X., Phys. Rev. B, 58, 14020 (1998).Google Scholar
6. Zhang, Q., Lai, W.S. and Liu, B.X., Phys. Rev. B, 61, 9345 (2000).Google Scholar
7. Schröder, H., Samwer, K., and Koster, U., Phys. Rev. Lett., 54, 197 (1985).Google Scholar
8. Yang, G. W., Lin, C. and Liu, B. X., J. Mater. Res., 14, 3027 (1999).Google Scholar
9. Massobrio, C., Pontikis, V., and Martin, G., Phys. Rev. B, 41, 10486 (1990).Google Scholar
10. Lai, W. S. and Liu, B. X., J. Phys. Condensed Matter, 12, L53 (2000).Google Scholar
11. Parrinello, M. and Rahman, A., J. Appl. Phys., 52, 7182 (1981).Google Scholar
12. Beukel, A. van den and Radelaar, S., Acta Met., 31, 419 (1983).Google Scholar
13. Bøttiger, J., Dyrbye, K., Pampus, K. and Poulsen, R., Philos. Mag. A, 59, 569 (1989).Google Scholar
14. Okamoto, P. R., Lam, N. Q., and Rehn, L. E., Physics of Crystal-to-Glass Transformations, in Solid State Physics, edited by Ehrenreich, H. and Spaepen, F., 52, 1 (1999).Google Scholar
15. Minemura, T., Broek, J.J. van den, Daams, J.L.C., J. Appl. Phys., 64, 4770 (1988).Google Scholar
16. Okamoto, P. R., Heuer, J. K., Lam, N. Q., Ohnuki, S., Matsukawa, Y., Tozawa, K., Stubbins, J. F., Appl. Phys. Lett., 73, 473 (1998).Google Scholar
17. Kwon, K. W., Lee, H. J., and Sinclair, R., Appl. Phys. Lett., 75, 935 (1999).Google Scholar