Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-19T14:24:40.065Z Has data issue: false hasContentIssue false
  • English
  • Français

Capacitance Spectroscopy of Defects in a-SI:H/c-SI Heterostructures

Published online by Cambridge University Press:  15 February 2011

M. Rösch ,
T. Unold ,
R. Pointmayer  and
G.H. Bauer
M. Rösch
Affiliation:
Fachbereich Physik, Universität Oldenburg, 26111 Oldenburg, F.R.Germany
T. Unold
Affiliation:
Fachbereich Physik, Universität Oldenburg, 26111 Oldenburg, F.R.Germany
R. Pointmayer
Affiliation:
Fachbereich Physik, Universität Oldenburg, 26111 Oldenburg, F.R.Germany
G.H. Bauer
Affiliation:
Fachbereich Physik, Universität Oldenburg, 26111 Oldenburg, F.R.Germany
Get access

Abstract

We investigate defects at the interface in heterodiodes of hydrogenated amorphous silicon and monocrystalline silicon by frequency and temperature dependent capacitance measurements. The interpretation of the experimental results is supported by numerical simulations of capacitance experiments via transient calculations of defect charging and decharging in the diodes. A defined variation of waver surface treatments prior to amorphous silicon deposition shows a clear correlation of interface defects determined by capacitance measurements with current-voltage characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 463
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Sawada, T., Terada, N., Tsuge, S., Baba, T., Takahama, T., Wakisaka, K., Tsuga, S., Nakano, S.: Proc. of the 1st World Conf. On Photovoltaic Energy Conversion (IEEE, Piscataway, 1994), p. 1219 Google Scholar
[2] Jagannathan, B., Anderson, W.A., Solar Energy Materials and Solar Cells 44, p.165–176 (1996)Google Scholar
[3] Tanaka, M., Taguchi, M., Matsuyama, T., Sawada, T., Tsuda, S., Nakano, S., Hanafusa, H., Kuwano, Y., Jpn. J. Appl. Phys. 31, p. 3518–3522, (1992)Google Scholar
[4] Caputo, D., Cesare, G. de, Nascetti, A., Palma, F., Rosa, R. De, Tucci, M., Proc. of the 2nd World Conf. On Photovoltaic Energy Conversion (Vienna, 1998), in pressGoogle Scholar
[5] Jagannathan, B., Anderson, W.A., J.Appl. Phys. 82, p. 1930 (1997)Google Scholar
[6] Essick, J.M., Cohen, J.D., Appl. Phys. Lett. 55, p. 1232–1234 (1989)Google Scholar
[7] Brüggemann, R., Solid State Phenomena 44–46, Part 1, p.505 (1995)Google Scholar
[8] Brüggemann, R., Main, C., Bauer, G.H., MRS Symposium Proceedings 258 (MRS, Pittsburg), p. 729 (1992)Google Scholar
[9] Matsuura, H., Okuno, T., Okushi, H., Tanaka, K., J.Appl. Phys. 55, p. 1012–1019(1984)Google Scholar